The Effect of the Doping Profile in Aluminum Back-Surface-Field on the Electronic Properties of c-Si Solar Cells

Abstract:

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The electronic properties of the solar cells were greatly influenced by the aluminum atomic concentration in Al-BSF region under that the Al-BSF is doped heavily. The effects of the dopincg profile in heavily-doped Al-BSF on electronic properties of n+pp+ monocrystalline solar cells were investigated by PC1D. The results show that the electronic properties of solar cells are almost independent of the doping profile of the Al-BSF, but are more or less affected by the BSF profile if the solar cell back surface is passivated well with the BSRV less than ~105cm/s. When the sheet resistance is about between 5 and 30Ω/□, the conversion efficiency can reach the maximum value. And the optimum thickness of Al-BSF is about between 10~15μm.

Info:

Periodical:

Materials Science Forum (Volumes 654-656)

Main Theme:

Edited by:

Jian-Feng Nie and Allan Morton

Pages:

1690-1693

DOI:

10.4028/www.scientific.net/MSF.654-656.1690

Citation:

J. C. Zhou and Y. M. Chen, "The Effect of the Doping Profile in Aluminum Back-Surface-Field on the Electronic Properties of c-Si Solar Cells", Materials Science Forum, Vols. 654-656, pp. 1690-1693, 2010

Online since:

June 2010

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$35.00

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