The Effect of the Doping Profile in Aluminum Back-Surface-Field on the Electronic Properties of c-Si Solar Cells

Abstract:

The electronic properties of the solar cells were greatly influenced by the aluminum atomic concentration in Al-BSF region under that the Al-BSF is doped heavily. The effects of the dopincg profile in heavily-doped Al-BSF on electronic properties of n+pp+ monocrystalline solar cells were investigated by PC1D. The results show that the electronic properties of solar cells are almost independent of the doping profile of the Al-BSF, but are more or less affected by the BSF profile if the solar cell back surface is passivated well with the BSRV less than ~105cm/s. When the sheet resistance is about between 5 and 30Ω/□, the conversion efficiency can reach the maximum value. And the optimum thickness of Al-BSF is about between 10~15μm.

• Periodical: Materials Science Forum (Volumes 654-656)
• Pages: 1690-1693
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.654-656.1690
• Online since: June 2010
• Authors: Ji Cheng Zhou, Yong Min Chen
• Keywords: Aluminum Back-Surface-Field (Al-BSF), c-Si Solar Cell, Doping Profile, Electronical Property

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