Simulation of Dislocation Accumulation in ULSI Cells of Reduced Gate Length

Abstract:

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We numerically evaluate the accumulation of dislocations in periodic structure of the shallow trench isolation (STI) type ULSI cells which has generally been adopted as the latest semiconductor device structure. STI type ULSI cells with gate length less than 62 nm and various trench depths are employed and subjected to a temperature drop from the initial value of 1000 °C. Dislocation accumulation is evaluated by a technique of crystal plasticity analysis. Relations between the geometry of the STI type ULSI cells and dislocation accumulation are discussed.

Info:

Periodical:

Materials Science Forum (Volumes 654-656)

Main Theme:

Edited by:

Jian-Feng Nie and Allan Morton

Pages:

1682-1685

DOI:

10.4028/www.scientific.net/MSF.654-656.1682

Citation:

M. Sato et al., "Simulation of Dislocation Accumulation in ULSI Cells of Reduced Gate Length", Materials Science Forum, Vols. 654-656, pp. 1682-1685, 2010

Online since:

June 2010

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Price:

$35.00

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