Improvement of Oxidation Resistance of SiC/C (Graphite) Composites by Silicon Infiltration in Surface

Abstract:

SiC/C (graphite) composite ceramics with 20vol% flake graphite were fabricated by Plasma Activated Sintering (PAS) firstly; the composites treated by silicon infiltration in surface were oxidized from 800oC to 1500oC. Effect of silicon infiltration on the oxidation resistance of SiC/C (graphite) composites was characterized by TG/DTA, SEM and XRD. The results show that the graphite in surface of composites reacted with silicon to form a dense SiC film about 30μm-in-thickness. The oxidation resistance temperature was increased from 600oC to 1300oC. Below 1300oC, the surface of composites by silicon filtration was oxidized to form a dense continuous oxide film to hider the oxidation of graphite in matrix. At 1500oC, the surface oxide film was heavy damaged, and many micropores were produced; inner graphite was oxidized above 1300oC again.

• Periodical: Materials Science Forum (Volume 658)
• Pages: 384-387
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.658.384
• Online since: July 2010
• Authors: Hong Wei Li, Qin Zhang, Zhi Hao Jin, Jiping Wang, Hai Yun Jin
• Keywords: Antioxidation, Graphite, Silicon Carbide (SiC), Silicon Infiltration

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