Using La(NO3)3•nH2O and Ni(CH3COO)2•4H2O as starting materials, alcohol mixed with methoxyethanol as solvent, the LaNiO3 (LNO) solution was prepared. Using this solution, conducting LNO films with sheet resistance of 10Ω were obtained. XRD and HRTEM indicate that the LNO films are epitaxially grown on LaAlO3 (LAO) substrates. Using Pb(CH3COO)2•3H2O, La(NO3)3•nH2O, Ti(OC4H9)4, Zr(OC4H9)4 as starting materials, the PZT films were prepared on the LNO films. The PZT films are c-oriented. The as-prepared PZT film has a remanent polarization of 34.7µC/cm2, superior to the PZT film with random orientation and a remanent polarization of 18.4µC/cm2 prepared on ITO/quartz substrate.