Bulk PZT Thick Film Preparation on Silicon Wafer and its Application for MEMS Power Generator

Abstract:

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The paper reports on the PZT thick films preparation method by bonding bulk PZT on Si and then lapping PZT to suitable thicknesses. Epoxy resins with preferable thermostability were used as the intermediate adhesive layer in bonding process. A tight bonding of more than 10MPa was attained at suitable gradient bonding temperatures in an oven which were from 30 oC up to 105 oC according to 15 oC per thirty minutes and holding for more than 3h at 105 oC, and a pressure of more than 0.05MPa. Some properties of the prepared PZT thick films were tested. Finally, a piezoelectric MEMS power generator was fabricated by using the described techniques of PZT thick films preparation on silicon. The maximum output voltage under the resonant operation was measured.

Info:

Periodical:

Materials Science Forum (Volumes 663-665)

Edited by:

Yuan Ming Huang

Pages:

1115-1120

DOI:

10.4028/www.scientific.net/MSF.663-665.1115

Citation:

G. Tang et al., "Bulk PZT Thick Film Preparation on Silicon Wafer and its Application for MEMS Power Generator", Materials Science Forum, Vols. 663-665, pp. 1115-1120, 2011

Online since:

November 2010

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$35.00

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