Experiment Research on Removing Metal Impurities of the Pot Material in Vacuum Directional Solidification

Abstract:

The pot material of Sb-doped n-type mono-crystal silicon was purified by our selfassembled vacuum directional solidification furnace. In the experimental, the pulling rate was 7μm/s, 10μm/s, 20μm/s, 30μm/s and 40μm/s, respectively. The experimental concentration of Sb, Al and Fe at 0.3 proportion of silicon ingot bottom to the top is detected and the theoretical concentration is calculated. The experimental results show that the pulling rate causes a great effect to concentration of Sb and a small effect to concentration of Fe. At the same time, the theoretical distribution concentration and experimental distribution concentration were compared. The experimental route provided a promising idea for complex utilization of the pot material.

• Periodical: Materials Science Forum (Volumes 675-677)
• Pages: 89-92
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.675-677.89
• Online since: February 2011
• Authors: Wen Hui Ma, Xiang Yang Mei, Kui Xian Wei, Shao Yu Tang
• Keywords: Pot Material, Purification, Silicon, Vacuum Directional Solidification

References

[1] A research report on 2007 global industry chain of solar-grade polycrystalline silicon．Beijing：Research In China，2007. 9.

[2] W. Hoffmann: Sol. Energ. Mat. Sol. C. Vol. 90 (2006), p.3285.

[3] A. Muller, M. Ghosh, R. Sonnenschein, P. Woditsch: Mat. Sci. Eng. B-Solid, Vol. 7 (2006), p.1.

[4] S. Martinuzzi, I. Pe' richaud, O. Palais: Sol. Energ. Mat. Sol. C. Vol. 91 (2007), P. 1172.

[5] D. Macdonald: J. Appl. Phys, Vol. 97 (2005), p.033523.

[6] Deng Hai, Yang Deren, Tang Jun: Acta Energiae Solaris Sinica, Vol. 28 (2007), p.151.