Transition-Metal Impurities Removal from Metallurgical Grade Silicon by Electron Beam Injection

Rui Xun Zou; Da Chuan Jiang; Wei Dong; Zheng Gu; Yi Tan

doi:10.4028/www.scientific.net/MSF.675-677.105

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Effects of Impurities Distribution on the Crystal Structure and Electrical Properties of Multi-Crystalline Silicon Ingots
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HomeMaterials Science ForumMaterials Science Forum Vols. 675-677Transition-Metal Impurities Removal from...

Transition-Metal Impurities Removal from Metallurgical Grade Silicon by Electron Beam Injection

Abstract:

The electron beam injection (EBI) process involves offering electrons around silicon powder, whose surface was oxidized, and subsequently the powder is washed by HF acid so as to remove the SiO2 film. The new electron beam injection process, in which micro electric filed formed between Si and SiO2 film will accelerate impurities diffusion from Si to SiO2 film, was developed and applied to eliminate the transition-metal impurities of MG-Si. It is proved to be effective to remove transition-metal impurities from metallurgical grade silicon (MG-Si). By applying the electron beam injection method, the removal rate of 10% to 59% was achieved during the refining process. The efficiency of impurity removal originates from two aspects: the impurity concentration gradient on both sides of Si/SiO2 interface; the micro electric field formed from Si to SiO2 film. A further increase in the removal rate can be realized by controlling the processing parameters.

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Materials Science Forum (Volumes 675-677)

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105-108

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https://doi.org/10.4028/www.scientific.net/MSF.675-677.105

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Online since:

February 2011

Authors:

Rui Xun Zou, Da Chuan Jiang, Wei Dong, Zheng Gu, Yi Tan

Keywords:

Electron Beam Injection, Metallurgical Grade Si, Transition Metal Impurities

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