High Temperature Stability of SiC/Ti Interface

Abstract:

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Ti, SiC and their composite materials have been widely used as high temperature structural material. The knowledge of interfacial stability between SiC and Ti is vital in high temperature applications. In this study, SiC/Ti diffusion couples were prepared to investigate the interfacial reactions between SiC and Ti at 1273 K. Phase forming sequence, microstructure and thermal stability of SiC/Ti interface were studied. It was indicated that after annealed at 1273 K for 10 days, 4 reaction layers were formed at the SiC/Ti interface. The diffusion path between SiC and Ti is SiC/Ti3SiC2/Ti5Si3/Ti5Si3+TiC/Ti3Si/Ti. As the annealing time prolong, the thicknesses of these reaction layers increased.

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Periodical:

Edited by:

Kunyuan Gao, Shaoxiong Zhou, Xinqing Zhao

Pages:

340-344

DOI:

10.4028/www.scientific.net/MSF.685.340

Citation:

T. W. L. Ngai et al., "High Temperature Stability of SiC/Ti Interface", Materials Science Forum, Vol. 685, pp. 340-344, 2011

Online since:

June 2011

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$35.00

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