High Temperature Stability of SiC/Ti Interface

Tungwai Leo Ngai; Chang Xu Hu; Wei Zheng; Heng Xie; Yuan Yuan Li

doi:10.4028/www.scientific.net/MSF.685.340

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HomeMaterials Science ForumMaterials Science Forum Vol. 685High Temperature Stability of SiC/Ti Interface

High Temperature Stability of SiC/Ti Interface

Abstract:

Ti, SiC and their composite materials have been widely used as high temperature structural material. The knowledge of interfacial stability between SiC and Ti is vital in high temperature applications. In this study, SiC/Ti diffusion couples were prepared to investigate the interfacial reactions between SiC and Ti at 1273 K. Phase forming sequence, microstructure and thermal stability of SiC/Ti interface were studied. It was indicated that after annealed at 1273 K for 10 days, 4 reaction layers were formed at the SiC/Ti interface. The diffusion path between SiC and Ti is SiC/Ti₃SiC₂/Ti₅Si₃/Ti₅Si₃+TiC/Ti₃Si/Ti. As the annealing time prolong, the thicknesses of these reaction layers increased.

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Periodical:

Materials Science Forum (Volume 685)

Pages:

340-344

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.685.340

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Online since:

June 2011

Authors:

Tungwai Leo Ngai, Chang Xu Hu, Wei Zheng, Heng Xie, Yuan Yuan Li

Keywords:

Diffusion Path, Interface, Silicon Carbide (SiC), Thermal Stability

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