The Microstructure, Resistivity and Infrared Emissivity of ITO Film with O/Ar Ratio Variation in Al₂O₃ Buffer Layer

Abstract:

ITO films with different oxygen-argon ratios varies from 0 % to 8 % for Al₂O₃ buffer layer have been fabricated by magnetron sputtering on soft PET substrate. The microstructure, resistivity, transmittance in visible light range and infrared emissivity were measured by XRD, four-point probe technology, UV-Vis spectrophotometer and Fourier Transform Infrared Spectroscopy (FTIR) as a function of different oxygen-argon ratios of Al₂O₃ buffer layers, respectively. It can be found that the (222) plane crystallization improves with the increase of O/Ar ratio, (622） peak under 2% O/Ar ratio and (440), (211) peaks under 8% O/Ar ratio appear, respectively. The resistivity is also influenced significantly by the O/Ar ratio, though the variation of resistivity is not sensitive to O/Ar ratio higher than 2%. The results reveal that the best ITO film performance under the oxygen-argon ratio 2% for Al₂O₃ buffer layer. It is also found that surface roughness and interface state play an important role in the variation of transmittance and emissivity. The emissivity of all the ITO films deposited on Al₂O₃ buffer layer is dominated by both sheet resistance and surface morphology.

• Periodical: Materials Science Forum (Volume 687)
• Pages: 771-777
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.687.771
• Online since: June 2011
• Authors: Yi Peng Chao, Wu Tang, Xiao Long Weng, Long Jiang Deng
• Keywords: Emissivity, ITO Film, Resistivity

References

[1] K. Yang, K.M. Yoon, S.W. Lim and H. Lee: J. Vac. Sci. Technol. Vol. 27 (2009), p.2786.

[2] H.B. Andagana and X.A. Cao: J. Vac. Sci. Technol. Vol. 28 (2010), p.189.

[3] V. Bhosle, A. Tiwari, and J. Narayan: Appl. Phys. Lett. Vol. 88 (2006), p.032106.

[4] H. Guo, K. Brown, D. Korakakis, and X.A. Cao: J. Vac. Sci. Technol. Vol. 27 (2009), p.1161.

[5] Y. Wang, X.H. Chen, Y.L. Zhong, F.R. Zhu and K.P. Loh: Appl. Phys. Lett. Vol. 95 (2009), p.063302.

[6] B.Y. Oh, M.C. Jeong, T.H. Moon, W. Lee, J.M. Myoung, J.Y. Hwang and D.S. Seo: J. Appl. Phys. Vol. 99 (2006), p.124505.

[7] P.R. Somani: Appl. Phys. Lett. Vol. 96 (2010), p.173504.

[8] K.T. Shiu, J. Zimmerman, H. Wang and S.R. Forrest: Appl. Phys. Lett. Vol. 95 (2009), p.223503.

[9] J. Martan, N. Semmar and O. Cibulka: J. Appl. Phys. Vol. 103 (2008), p.084909.

[10] K. Kinoshtia, T. Okutani, H. Tanaka, T. Hinoki, K. Yazawa, K. Ohmi and S. Kishida: Appl. Phys. Lett. Vol. 96 (2010), p.143505.

DOI: 10.1063/1.3380822

[11] A. Amassian, M. Dudek, O. Zabeida, S. C. Gujrathi, J. E. Klemberg-Sapieha and L. Martinu: J. Vac. Sci. Technol. Vol. 27 (2009), p.362.

[12] J.H. Jeon, Y.H. Hwang, B.S. Bae, H.L. Kwon and H. J. Kang: Appl. Phys. Lett. Vol. 96 (2010), p.212109.

[13] A. Indluru and T.L. Alford: J. Appl. Phys. Vol. 105 (2009), p.123528.

[14] M.S. Huh, B.S. Yang, J. Song, J. Heo, S. J Won, J.K. Jeong, C.S. Hwang and H.J. Kima: J. Electrochem. Soc. Vol. 156 (2009), p. J6.

[15] W.J. Zhang, T.M. Wang, L.Z. Zhong, X.W. Wu and M. Cui: Acta. Phys. Sin. Vol. 54 (2005), p.4439.

[16] Y.H. Zhou, Z.M. Zhang: J. Heat Transfer. Vol. 125 (2003), p.462.