Epitaxial Growth of α-Fe2O3 Thin Films on c-Plane Sapphire Substrate by Hydrothermal Method

Abstract:

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Thin films of hematite find extensive applications in photoelectrochemistry, photocatalysis, and gas sensors. c-axis oriented hematite films have been directly grown on c-plane sapphire substrate using chemical method via hydrolysis of ferric cations. X-ray diffraction (XRD) reveals that the crystalline phases of the films and corresponding sediment produced in the solution were α-Fe2O3 and pure β-FeOOH, demonstrating the promotion of nucleation of hematite on sapphire substrate as a result of lowered interface energy. Phi-scan results indicate that the hematite films are grown with (0001) planes parallel to c-plane of Al2O3. Scanning electron microscopic observation shows that the hematite films are composed of pyramid-shaped nanocrystals with smooth surface facets.

Info:

Periodical:

Materials Science Forum (Volumes 702-703)

Edited by:

Asim Tewari, Satyam Suwas, Dinesh Srivastava, Indradev Samajdar and Arunansu Haldar

Pages:

999-1002

DOI:

10.4028/www.scientific.net/MSF.702-703.999

Citation:

S. Li et al., "Epitaxial Growth of α-Fe2O3 Thin Films on c-Plane Sapphire Substrate by Hydrothermal Method", Materials Science Forum, Vols. 702-703, pp. 999-1002, 2012

Online since:

December 2011

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$35.00

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