On Applicability of Time-Resolved Optical Techniques for Characterization of Differently Grown 3C-SiC Crystals and Heterostructures

Abstract:

We applied a number of time-resolved optical techniques for investigation of optical and photoelectrical properties of cubic SiC grown by different technologies on different substrates. The excess carriers were injected by a short laser pulse and their dynamics was monitored by free-carrier absorption, light-induced transient grating, and photoluminescence techniques in a wide excitation range. Combining an optical and electrical probe beam delay, we found that free carrier lifetimes in differently grown layers vary from few ns up to 20 μs. Temperature dependences of carrier diffusivity and lifetime revealed a pronounced carrier trapping in thin sublimation grown layers. In free-standing layers and thick sublimation layers, the ambipolar mobility was found the highest (120 cm²/Vs at room temperature). A linear correlation between the room-temperature band edge emission and carrier lifetime in differently grown layers was attributed to defect density, strongly dependent on the used growth conditions.

• Periodical: Materials Science Forum (Volume 711)
• Pages: 159-163
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.711.159
• Online since: January 2012
• Authors: Patrik Ščajev, Pavels Onufrijevs, Georgios Manolis, Mindaugas Karaliūnas, Saulius Nargelas, Nikoletta Jegenyes, Jean Lorenzzi, Gabriel Ferro, Milena Beshkova, Remigijus Vasiliauskas, Mikael Syväjärvi, Rositza Yakimova, Masashi Kato, Kęstutis Jarašiūnas
• Keywords: Carrier Lifetime, Carrier Trapping, Cubic Silicon Carbide (3C-SiC), Doping, Free Carrier Absorption, Light-Induced Transient Grating, Mobility

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