Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs

Abstract:

4H-SiC presents great advantages for its use in power electronic devices working at particular conditions. However the development of MOSFETs based on this material is limited by mobility degradation. N-channel SiC MOSFETs were manufactured on p-type epitaxial and p-implanted substrates and the electron mobility in the inversion channels was measured to be correlated with their structural and chemical properties determined by transmission electron microscopy methods. With regard to what was previously discussed in the literature, transition layer formation and carbon distribution across the SiC-SiO₂ interface are considered in relation with the measured low electron mobility of the MOSFETS.

• Periodical: Materials Science Forum (Volume 711)
• Pages: 134-138
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.711.134
• Online since: January 2012
• Authors: Ana Maria Beltran, Sylvie Schamm-Chardon, Vincent Mortet, Mathieu Lefebvre, Elena Bedel-Pereira, Fuccio Cristiano, Christian Strenger, Volker Häublein, Anton J. Bauer
• Keywords: 4H-SiC MOSFET, Hall Mobility, HRTEM, SiC/SiO₂ Interface, Spatially-Resolved EELS

References

[1] A. Agarwal, S. Haney, J. Elec. Mater 37 (2008) 646-654.

[2] S. Potbhare, N. Goldsman, G. Pennington, A. Lelis, J. M. McGarrity, J. Appl. Phys. 100 (2006) 044515, 1-8.

[3] G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonalds, M. Di Ventra, S. T. Pantelides, L. C. Feldman, R. A. Weller, Appl. Phys. Lett. 76 (2000) 1713-1715.

DOI: 10.1063/1.126167

[4] X. Shen, S. T. Pantelides, Appl. Phys. Lett. 98 (2011) 053507, 1-3.

[5] V. V. Afanas'ev, A. Stesmans, C. I. Harris, Mat. Sci. Forum 264-268 (1998) 857-860.

[6] T. L. Biggerstaff, C. L. Reynolds, T. Zheleva, A. Lelis, D. Habersat, S. Haney, S. -H. Ryu, A. Agarwal, G. Duscher, Appl. Phys. Lett. 95 (2009) 032108, 1-3.

DOI: 10.1063/1.3144272

[7] K. C. Chang, L. M. Porter, J. Bentley, C-Y. Lu, J. Cooper Jr, L. C. Feldman, J. R. Williams, J. Appl. Phys. 95 (2004) 8252-8257.

[8] T. Zheleva, A. Lelis, G. Duscher, F. Liu, I. Levin, M. Das, Appl. Phys. Lett. 93 (2008) 022108, 1-3.

DOI: 10.1063/1.2949081

[9] http: /www. iisb. fraunhofer. de/mobisic.

[10] C. Strenger, V. Häublein, T. Erlbacher, A. J. Bauer, H. Ryssel, A. M. Beltran, S. Schamm-Chardon, V. Mortet, E. Bedel-Pereira, M. Lefebvre, F. Cristiano, submitted to proceddings of ICSCRM (2011).

DOI: 10.4028/www.scientific.net/msf.717-720.437

[11] M. Haider, H. Rose, S. Uhlemann, E. Schwan, B. Kabius, K. Urban, Ultramicroscopy 75 (1998) 53-60.

DOI: 10.1016/s0304-3991(98)00048-5

[12] D. K. Schroder, Semiconductor Material and device characterization, Third Edition, IEEE Press, Wiley Interscience, Arizona State University (2006).

[13] V. Tilak, K. Matocha, G. Dunne, Mater. Sci. Forum 645-648 (2010) 1005-1008.

[14] M. Gurfinkel, S. S. Potbhare, H. D Xiong, J. S. Suehle, Y. Shapira, A. J. Lelis, D. Habersat, N. Goldsman, J. Appl. Phys. 105 (2009) 084511, 1-4.

DOI: 10.1063/1.3110071

[15] V. Tilak, K. Matocha, and G. Dunne, IEEE Trans. Electron Devices 54 (2007) 2823-2829.

DOI: 10.1109/ted.2007.906929

[16] J. Rozen, S. Dhar, M. E. Zvanut, J. R. Williams, L. C. Feldman, J. Appl. Phys. 105 (2009) 124506, 1-11.

[17] E. Pippel, J. Woltersdorf, H. O. Olafsson, E. I. Sveinjörsson, J. Appl. Phys. 97 (2005) 034302, 1-8.

[18] K. C. Chang, Y. Cao, L. M. Porter, J. Bentley, S. Dhar, L. C. Feldman, J. R. Williams, J. Appl. Phys. 97 (2005) 104920, 1-6.