High Temperature Capability of High Voltage 4H-SiC JBS

Maxime Berthou; Philippe Godignon; Bertrand Vergne; Pierre Brosselard

doi:10.4028/www.scientific.net/MSF.711.124

Paper Titles

Design of Digital Electronics for High Temperature Using Basic Logic Gates Made of 4H-SiC MESFETs
p.104

The Influence of Gate Material, SiO₂ Fabrication Method and Gate Edge Effect on Interface Trap Density in 3C-SiC MOS Capacitors
p.109

Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour
p.114

Visible and Deep Ultraviolet Study of SiC/SiO₂ Interface
p.118

High Temperature Capability of High Voltage 4H-SiC JBS
p.124

Parallel and Serial Association of SiC Light Triggered Thyristors
p.129

Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs
p.134

Structural Characterization of Graphene Grown by Thermal Decomposition of Off-Axis 4H-SiC (0001)
p.141

Seeding Layer Influence on the Low Temperature Photoluminescence Intensity of 3C-SiC Grown on 6H-SiC by Sublimation Epitaxy
p.149

HomeMaterials Science ForumMaterials Science Forum Vol. 711High Temperature Capability of High Voltage 4H-SiC...

High Temperature Capability of High Voltage 4H-SiC JBS

Abstract:

This paper presents the high blocking capability of the 4H-SiC tungsten Schottky and junction barrier Schottky (JBS) diodes at room temperature as well as at high operating temperature. First, we present the design of the proposed devices and the process employed for their fabrication. In a second part, their forward and reverse characteristics at room temperature will be presented. Our rectifiers exhibit blocking capability up to 9kV at room temperature. Then, we investigate the reverse current behaviour at 5kV from room temperature to 250°C under vacuum. JBS and Schottky devices that are capable to block 8kV at room temperature, show leakage current inferior to 100µA at 250°C when reverse biased at 5kV. It confirms the capability of Silicon Carbide to produce devices capable of operation at temperatures and voltages above the Silicon limits.

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Periodical:

Materials Science Forum (Volume 711)

Pages:

124-128

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.711.124

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Online since:

January 2012

Authors:

Maxime Berthou, Philippe Godignon, Bertrand Vergne, Pierre Brosselard

Keywords:

Diode, High Voltage (HV), High-Temperature, Junction Barrier Schottky (JBS) Diode, Schottky, Silicon Carbide (SiC)

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References

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