Visible and Deep Ultraviolet Study of SiC/SiO₂ Interface

Abstract:

Silicon carbide (SiC) is a wide band gap semiconductor having good thermal conductivity and high break down voltage. Formation of SiO₂ layer in thermal oxidation process completes the set of properties of SiC as a promising material for fabrication of high power and high frequency electronic devices. This picture is perturbed by Near Interface Traps (NIT's) that decrease the surface mobility of charge carriers. The origin of NIT's is still the subject of discussion and there are several candidates for NIT's. One possibility is the formation of carbonic structures during the process of manufacturing of MOS-type structures. The aim of this work was to look for possible carbonic inclusions with Raman spectroscopy. The attention of authors was focused on non-destructive way of application of the experimental technique.

• Periodical: Materials Science Forum (Volume 711)
• Pages: 118-123
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.711.118
• Online since: January 2012
• Authors: Pawel Borowicz, Tomasz Gutt, Tomasz Malachowski, Mariusz Latek
• Keywords: Carbonic Inclusions, Raman Scattering, SiC Interface, Silicon Carbide (SiC), SiO₂ Interface

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