Design of Digital Electronics for High Temperature Using Basic Logic Gates Made of 4H-SiC MESFETs

Mihaela Alexandru; Viorel Banu; Miguel Vellvehi; Philippe Godignon; José Millán

doi:10.4028/www.scientific.net/MSF.711.104

Paper Titles

High Frequency 3C-SiC AFM Cantilever Using Thermal Actuation and Metallic Piezoresistive Detection
p.80

Detailed Experimental Study of Mean and Gradient Stresses in Thin 3C-SiC Films Performed Using Micromachined Cantilevers
p.84

High Quality 3C-SiC Substrate for MOSFET Fabrication
p.91

Characterization of Band Diagrams of Different Metal-SiO₂-SiC(3C) Structures
p.99

Design of Digital Electronics for High Temperature Using Basic Logic Gates Made of 4H-SiC MESFETs
p.104

The Influence of Gate Material, SiO₂ Fabrication Method and Gate Edge Effect on Interface Trap Density in 3C-SiC MOS Capacitors
p.109

Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour
p.114

Visible and Deep Ultraviolet Study of SiC/SiO₂ Interface
p.118

High Temperature Capability of High Voltage 4H-SiC JBS
p.124

HomeMaterials Science ForumMaterials Science Forum Vol. 711Design of Digital Electronics for High Temperature...

Design of Digital Electronics for High Temperature Using Basic Logic Gates Made of 4H-SiC MESFETs

Abstract:

– 4H-SiC MESFET transistors are very attractive devices for high temperature application and communications. The JFET and MESFET transistors have a promising potential for integrated circuits able to operate at high temperature and harsh radiation environments, due to the superior electrical, mechanical and chemical proprieties of 4H-SiC. Progresses in the manufacturing of high quality SiC substrates open the possibility to new circuit applications.

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Periodical:

Materials Science Forum (Volume 711)

Pages:

104-108

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.711.104

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Online since:

January 2012

Authors:

Mihaela Alexandru, Viorel Banu, Miguel Vellvehi, Philippe Godignon, José Millán

Keywords:

4H-SiC, High Temperature Electronics, SiC Integrated Circuits, SiC MESFETs

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