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HomeMaterials Science ForumMaterials Science Forum Vol. 711Characterization of Band Diagrams of Different...

Characterization of Band Diagrams of Different Metal-SiO₂-SiC(3C) Structures

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Abstract:

In this work the band diagrams of different MOS structures based on 3C-SiC substrate were determined. This has been achieved by application of many measurement techniques allowing determination of many electric parameters of the investigated structures. These parameters allowed to construct complete band diagrams which are demonstrated for two modes: for the flat-band state in the semiconductor and for the flat-band state in the dielectric.

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HeteroSiC & WASMPE 2011

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Periodical:

Materials Science Forum (Volume 711)

Pages:

99-103

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.711.99

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Online since:

January 2012

Authors:

Krzysztof Piskorski, Henryk M. Przewlocki, Romain Esteve, Mietek Bakowski

Keywords:

Effective Contact Potential Difference, Flat-Band Voltage, MOS Structure, Silicon Carbide (SiC)

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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[1] M. Ruff, H. Mitlehner and R. Helbig, SiC devices: Physics and Numerical Simulation, IEEE Trans. Electron. Dev. 41(6) (1994), 1040-1054.

DOI: 10.1109/16.293319

[2] H. Morkoc, S. Strite, G. B. Gao, M. E. Lin and M. Burns, Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies, J. Appl. Phys. 76(3) (1994), 1363-1398.

DOI: 10.1063/1.358463

[3] M. Shur, SiC parameters handbook, http://www.ioffe.ru/SVA/NSM/Semicond/SiC.

[4] R. Schörner, P. Friedrichs and D. Peters, Detailed investigation of n-channel enhancement 6H-SiC MOSFETs, IEEE Trans. Electron Dev. 46 (1999), 533-541.

DOI: 10.1109/16.748873

[5] V. V. Afanas'ev, M. Bassler, G. Pensl, M. Schulz, Intrinsic SiC/SiO2 interface states, Phys. Stat. Sol.(a) 162 (1997), 321-337.

DOI: 10.1002/1521-396x(199707)162:1<321::aid-pssa321>3.0.co;2-f

[6] M. Bakowski, A. Schöner, P. Ericsson, H. Strömberg, H. Nagasawa and M. Abe, Development of 3C-SiC MOSFETs, J. Telecommun. Information Tech. 2 (2007), 49-56.

DOI: 10.4028/www.scientific.net/msf.483-485.801

[7] M. Bakowski, Status and prospects of SiC power devices, IEE J. Trans. Ind. Appl. 126 (2006), 391-399.

[8] E. H. Nicollian and J. R. Brews, MOS Physics and Technology, John Wiley, New York, 1982.

[9] R. H. Fowler, The analysis of photoelectric sensitivity curves for clean metals at various temperatures", Phys. Rev. 38 (1931), 45-56.

DOI: 10.1103/physrev.38.45

[10] V. V. Afanas'ev, Internal Photoemission Spectroscopy. Principles and Applic., Elsevier, 2008.

[11] C. N. Berglund and R. J. Powell, Photoinjection into SiO2: Use of optical interference to determine electron and hole contributions, J. Appl. Phys. 40(13) (1969), 5093-5101.

DOI: 10.1063/1.1657358

[12] H. M. Przewlocki, Internal photoemission characteristics of metal-insulator-semiconductor structures at low electric fields in the insulator, J. Appl. Phys. 85(9) (1999), 6610-6618.

DOI: 10.1063/1.370169

[13] H. M. Przewlocki, Theory and applications of internal photoemission in the MOS system at low electric fields, Solid-State Electr. 45 (2001), 1241-1250.

DOI: 10.1016/s0038-1101(00)00274-4

[14] S. K. Krawczyk, H. M. Przewlocki, A. Jakubowski, New ways to measure the work function difference in MOS structures, Revue Phys. Appl. 17 (1982), 473-480.

DOI: 10.1051/rphysap:01982001708047300

[15] V. V. Afanas'ev, M. Bassler, G. Pensl, M. J. Schulz and E. Stein von Kamienski, Band offsets and electronic structure of SiC/SiO2 interfaces, J. Appl. Phys. 79(6) (1996), 3108-3114.

DOI: 10.1063/1.361254