Selective β-SiC/SiO2 Core-Shell NW Growth on Patterned Silicon Substrate

Giovanni Attolini; Francesca Rossi; Filippo Fabbri; Giancarlo Salviati; Matteo Bosi; Bernard Enrico Watts

doi:10.4028/www.scientific.net/MSF.711.75

Paper Titles

Strain Field Analysis of 3C-SiC Free-Standing Microstructures by Micro-Raman and Theoretical Modelling
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Elaboration of Monocrystalline Si Thin Film on 3C-SiC(100)/Si Epilayers by Low Pressure Chemical Vapor Deposition
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Fabrication of SiC Nanopillars by Inductively Coupled SF₆/O₂ Plasma
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Material Limitations for the Development of High Performance SiC NWFETs
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Selective β-SiC/SiO₂ Core-Shell NW Growth on Patterned Silicon Substrate
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High Frequency 3C-SiC AFM Cantilever Using Thermal Actuation and Metallic Piezoresistive Detection
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Detailed Experimental Study of Mean and Gradient Stresses in Thin 3C-SiC Films Performed Using Micromachined Cantilevers
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High Quality 3C-SiC Substrate for MOSFET Fabrication
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Characterization of Band Diagrams of Different Metal-SiO₂-SiC(3C) Structures
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HomeMaterials Science ForumMaterials Science Forum Vol. 711Selective β-SiC/SiO2 Core-Shell NW Growth on...

Selective β-SiC/SiO₂ Core-Shell NW Growth on Patterned Silicon Substrate

Abstract:

β-SiC/SiO₂ core-shell NWs have been synthesized on patterned silicon wafers in a CVD system, using carbon oxide as single precursor and nickel nitrate as catalytic element, in nitrogen or argon atmosphere at 1100°C. The coaxial structure and the crystallinity of the NW core are examined by (scanning) transmission electron microscopy. The patterning of the substrate allows to grow NWs in selected areas only, as imaged by SEM. Cathodoluminescence (CL) panchromatic images of the same areas point out that the light emitted under electron excitation is localized only in the area covered with NWs. The room-temperature CL spectrum has three different components peaked at 2.45 eV, related to the 3C-SiC near-band-edge emission, and at 2.75 and 3.75 eV, that are induced by the triplet and singlet states of oxygen-deficiency centers ODC(II) in silicon dioxide shell.

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Materials Science Forum (Volume 711)

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75-79

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https://doi.org/10.4028/www.scientific.net/MSF.711.75

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Online since:

January 2012

Authors:

Giovanni Attolini, Francesca Rossi, Filippo Fabbri, Giancarlo Salviati, Matteo Bosi, Bernard Enrico Watts

Keywords:

Core-Shell Nanowires, Patterned, Selective Growth, Silicon Carbide (SiC)

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