Material Limitations for the Development of High Performance SiC NWFETs

Konstantinos Zekentes; Konstantinos Rogdakis; Edwige Bano

doi:10.4028/www.scientific.net/MSF.711.70

Paper Titles

Mechanical Proprieties and Residual Stress Evaluation on Heteroepitaxial 3C-SiC/Si for MEMS Application
p.51

Strain Field Analysis of 3C-SiC Free-Standing Microstructures by Micro-Raman and Theoretical Modelling
p.55

Elaboration of Monocrystalline Si Thin Film on 3C-SiC(100)/Si Epilayers by Low Pressure Chemical Vapor Deposition
p.61

Fabrication of SiC Nanopillars by Inductively Coupled SF₆/O₂ Plasma
p.66

Material Limitations for the Development of High Performance SiC NWFETs
p.70

Selective β-SiC/SiO₂ Core-Shell NW Growth on Patterned Silicon Substrate
p.75

High Frequency 3C-SiC AFM Cantilever Using Thermal Actuation and Metallic Piezoresistive Detection
p.80

Detailed Experimental Study of Mean and Gradient Stresses in Thin 3C-SiC Films Performed Using Micromachined Cantilevers
p.84

High Quality 3C-SiC Substrate for MOSFET Fabrication
p.91

HomeMaterials Science ForumMaterials Science Forum Vol. 711Material Limitations for the Development of High...

Material Limitations for the Development of High Performance SiC NWFETs

Abstract:

Back-gated field effect transistors (FETs) based on 3C-SiC nanowire (NW) were fabricated and the electrical characterization revealed devices with either ohmic or rectifying contacts leading to two different operation modes. The transistors with ohmic-like contacts manifest very weak gating effect and the device switching off is not achievable even for high negative gate voltages due to the high electron concentration along the nanowires. In contrast, the devices with Schottky contact barrier at Source / Drain regions demonstrate a well determined switching off and in general better performance thanks to the modulation of the drain current through the control of Schottky barriers transparency at the source and drain regions. Nevertheless, ohmic contact devices are expected to demonstrate even better performance if the NW material quality as well as the quality of the interface with the gate oxide is substantially improved.

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Materials Science Forum (Volume 711)

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70-74

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https://doi.org/10.4028/www.scientific.net/MSF.711.70

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Online since:

January 2012

Authors:

Konstantinos Zekentes, Konstantinos Rogdakis, Edwige Bano

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3C-SiC, Nanowire, NWFET

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