Fabrication of SiC Nanopillars by Inductively Coupled SF6/O2 Plasma

Ji Hoon Choi; Laurence Latu-Romain; Florian Dhalluin; Thierry Chevolleau; Bassem Salem; Thierry Baron; Didier Chaussende; Edwige Bano

doi:10.4028/www.scientific.net/MSF.711.66

Paper Titles

Study of 3C-SiC Mechanical Resonators, Filters and Mixers
p.43

Mechanical Proprieties and Residual Stress Evaluation on Heteroepitaxial 3C-SiC/Si for MEMS Application
p.51

Strain Field Analysis of 3C-SiC Free-Standing Microstructures by Micro-Raman and Theoretical Modelling
p.55

Elaboration of Monocrystalline Si Thin Film on 3C-SiC(100)/Si Epilayers by Low Pressure Chemical Vapor Deposition
p.61

Fabrication of SiC Nanopillars by Inductively Coupled SF₆/O₂ Plasma
p.66

Material Limitations for the Development of High Performance SiC NWFETs
p.70

Selective β-SiC/SiO₂ Core-Shell NW Growth on Patterned Silicon Substrate
p.75

High Frequency 3C-SiC AFM Cantilever Using Thermal Actuation and Metallic Piezoresistive Detection
p.80

Detailed Experimental Study of Mean and Gradient Stresses in Thin 3C-SiC Films Performed Using Micromachined Cantilevers
p.84

HomeMaterials Science ForumMaterials Science Forum Vol. 711Fabrication of SiC Nanopillars by Inductively...

Fabrication of SiC Nanopillars by Inductively Coupled SF₆/O₂ Plasma

Abstract:

A top-down fabrication technique for nanometer scale silicon carbide (SiC) pillars has been demonstrated by using inductively coupled SF₆/O₂ plasma etching. At optimal etching conditions, the obtained SiC nanopillars exhibit high anisotropy features (aspect ratio ~ 6.5) with high etch depth (>7 μm). The etch characteristics of SiC nanopillars under these conditions show a high etch rate (550 nm/min) and a high selectivity (over 60 for Ni).

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Materials Science Forum (Volume 711)

Pages:

66-69

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.711.66

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Online since:

January 2012

Authors:

Ji Hoon Choi, Laurence Latu-Romain, Florian Dhalluin, Thierry Chevolleau, Bassem Salem, Thierry Baron, Didier Chaussende, Edwige Bano

Keywords:

Dry Plasma Etch, Inductively Coupled Plasma Etching, Silicon Carbide (SiC)

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