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Paper Titles
The Influence of Gate Material, SiO2 Fabrication Method and Gate Edge Effect on Interface Trap Density in 3C-SiC MOS Capacitors
p.109
Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour
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Visible and Deep Ultraviolet Study of SiC/SiO2 Interface
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High Temperature Capability of High Voltage 4H-SiC JBS
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Parallel and Serial Association of SiC Light Triggered Thyristors
p.129
Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs
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Structural Characterization of Graphene Grown by Thermal Decomposition of Off-Axis 4H-SiC (0001)
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Seeding Layer Influence on the Low Temperature Photoluminescence Intensity of 3C-SiC Grown on 6H-SiC by Sublimation Epitaxy
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Parallel and Serial Association of SiC Light Triggered Thyristors

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Abstract:

This paper demonstrates the parallel and serial association of two SiC light triggered thyristors. Such systems are needed to increase the power handling capacity of SiC switches. The devices and their fabrication are presented. The experiments and their results are detailed, addressing particularly the problem of voltage and current sharing during the switching of the thyristors.

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Periodical:

Materials Science Forum (Volume 711)

Pages:

129-133

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.711.129

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Online since:

January 2012

Authors:

Nicolas Dheilly, Gontran Pâques, Sigo Scharnholz, Dominique Planson

Keywords:

Light-Triggered Thyristor, Parallel Association, Serial Association, Silicon Carbide (SiC)

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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References

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