Seeding Layer Influence on the Low Temperature Photoluminescence Intensity of 3C-SiC Grown on 6H-SiC by Sublimation Epitaxy

Georgios Zoulis; J.W. Sun; Remigijus Vasiliauskas; Jean Lorenzzi; Hervé Peyre; Mikael Syväjärvi; Gabriel Ferro; Sandrine Juillaguet; R. Yakimova; Jean Camassel

doi:10.4028/www.scientific.net/MSF.711.149

Paper Titles

High Temperature Capability of High Voltage 4H-SiC JBS
p.124

Parallel and Serial Association of SiC Light Triggered Thyristors
p.129

Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs
p.134

Structural Characterization of Graphene Grown by Thermal Decomposition of Off-Axis 4H-SiC (0001)
p.141

Seeding Layer Influence on the Low Temperature Photoluminescence Intensity of 3C-SiC Grown on 6H-SiC by Sublimation Epitaxy
p.149

Dose Influence on Physical and Electrical Properties of Nitrogen Implantation in 3C-SiC on Si
p.154

On Applicability of Time-Resolved Optical Techniques for Characterization of Differently Grown 3C-SiC Crystals and Heterostructures
p.159

Low Temperature Photoluminescence Investigation of 3-Inch SiC Wafers for Power Device Applications
p.164

Investigations on Ni-Ti-Al Ohmic Contacts Obtained on P-Type 4H-SiC
p.169

HomeMaterials Science ForumMaterials Science Forum Vol. 711Seeding Layer Influence on the Low Temperature...

Seeding Layer Influence on the Low Temperature Photoluminescence Intensity of 3C-SiC Grown on 6H-SiC by Sublimation Epitaxy

Abstract:

We report on n-type 3C-SiC samples grown by sublimation epitaxy. We focus on the low temperature photoluminescence intensity and show that the presence of a first conversion layer, grown at low temperature, is not only beneficial to improve the homogeneity of the polytype conversion but, also, to the LTPL signal intensity. From the use of a simple model, we show that this comes from a reduced density of non-radiative recombination centers.

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Periodical:

Materials Science Forum (Volume 711)

Pages:

149-153

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.711.149

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Online since:

January 2012

Authors:

Georgios Zoulis, J.W. Sun, Remigijus Vasiliauskas, Jean Lorenzzi, Hervé Peyre, Mikael Syväjärvi, Gabriel Ferro, Sandrine Juillaguet, R. Yakimova, Jean Camassel

Keywords:

3C-SiC, Al Doping, Low Temperature Photoluminescence, Sublimation Epitaxy

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