Experimental Demonstration of 1200V SiC-SBDs with Lower Forward Voltage Drop at High Temperature

Takashi Tsuji; Akimasa Kinoshita; Noriyuki Iwamuro; Kenji Fukuda; Kazuo Tezuka; Tatsuro Tsuyuki; Hiroshi Kimura

doi:10.4028/www.scientific.net/MSF.717-720.917

Paper Titles

Epitaxial Growth, Mechanical, Electrical Properties of SiC/Si and SiC/Poli-Si
p.897

ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures
p.901

Local Anodic Oxidation of Phosporous-Implanted 4H-SiC by Atomic Force Microscopy
p.905

Impact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC Diodes
p.911

Experimental Demonstration of 1200V SiC-SBDs with Lower Forward Voltage Drop at High Temperature
p.917

Performance of a 650V SiC Diode with Reduced Chip Thickness
p.921

A Fully Electrically Isolated Package for High Temperature SiC Sensors
p.925

Current Distribution in the Various Functional Areas of a 600V SiC MPS Diode in Forward Operation
p.929

4H-SiC Trench Structure Schottky Diodes
p.933

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Experimental Demonstration of 1200V SiC-SBDs with...

Experimental Demonstration of 1200V SiC-SBDs with Lower Forward Voltage Drop at High Temperature

Abstract:

The 1200V class silicon carbide Schottky barrier diodes were designed and fabricated. The drift layer resistance was reduced in order to realize low forward voltage drops. Since the low drift layer resistance led to the low breakdown voltage, the avalanche withstanding capability should be enhanced not to cause the destructive breakdown. By means of the optimized device design, we succeeded to realize the low forward voltage drop while maintaining the high avalanche withstanding capability. The forward voltage drops at 200A/cm² were 1.35V at 25°C and 1.63V at 175°C, respectively. The avalanche withstanding capability was more than 3500mJ/cm² at 25°C. By substituting SiC-SBDs for Si-pin diodes, the estimated total power loss of the module comprised by Si-IGBTs and the diodes was reduced by 35%. We could also confirm that no failures happened after long term reliability tests.