ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures

Lars Hiller; Thomas Stauden; Ricarda M. Kemper; Jörg K.N. Lindner; Donat J. As; Joerg Pezoldt

doi:10.4028/www.scientific.net/MSF.717-720.901

Paper Titles

SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements
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Focused Ion-Beam (FIB) Nanomachining of Silicon Carbide (SiC) Stencil Masks for Nanoscale Patterning
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Hexagonal Faceted SiC Nanopillars Fabricated by Inductively Coupled SF₆/O₂ Plasma Method
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Epitaxial Growth, Mechanical, Electrical Properties of SiC/Si and SiC/Poli-Si
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ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures
p.901

Local Anodic Oxidation of Phosporous-Implanted 4H-SiC by Atomic Force Microscopy
p.905

Impact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC Diodes
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Experimental Demonstration of 1200V SiC-SBDs with Lower Forward Voltage Drop at High Temperature
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Performance of a 650V SiC Diode with Reduced Chip Thickness
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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720ECR-Ectching of Submicron and Nanometer Sized...

ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures

Abstract:

Anisotropic etching processes for mesa structure formation using fluorinated plasma atmospheres in an electron cyclotron resonance (ECR) plasma etcher were studied on Novasic substrates with 10 µm thick 3C-SiC(100) grown on Si(100). To achieve reasonable etching rates, a special gas inlet system suitable for injecting SF6 into the high density downstream Ar ECR plasma was designed. The influence of the etching mask material on the sidewall morphology was investigated. Masking materials with small grain sizes are preferable to achieve a desired shape. The evolution of the mesa form was investigated in dependence on the gas composition, the applied bias, the pressure and the composition of the gas atmosphere. The achieved sidewall slope was 84.5 deg. The aspect ratios of the fabricated structures in the developed residue free ECR plasma etching process were between 5 and 10. Mesa structures aligned to [100] and [110] directions were fabricated.

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Materials Science Forum (Volumes 717-720)

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901-904

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https://doi.org/10.4028/www.scientific.net/MSF.717-720.901

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Online since:

May 2012

Authors:

Lars Hiller, Thomas Stauden, Ricarda M. Kemper, Jörg K.N. Lindner, Donat J. As, Joerg Pezoldt

Keywords:

3C-SiC, Electron Beam Lithography, Electron Cyclotron Resonance Etching

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