Hexagonal Faceted SiC Nanopillars Fabricated by Inductively Coupled SF6/O2 Plasma Method

J.H. Choi; Laurence Latu-Romain; Thierry Baron; Thierry Chevolleau; Edwige Bano

doi:10.4028/www.scientific.net/MSF.717-720.893

Paper Titles

Novel Cleaning Method of SiC Wafer with Transition Metal Complex
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Clearance of 4H-SiC Sub-Trench in Hot Chlorine Treatment
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SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements
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Focused Ion-Beam (FIB) Nanomachining of Silicon Carbide (SiC) Stencil Masks for Nanoscale Patterning
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Hexagonal Faceted SiC Nanopillars Fabricated by Inductively Coupled SF₆/O₂ Plasma Method
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Epitaxial Growth, Mechanical, Electrical Properties of SiC/Si and SiC/Poli-Si
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ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures
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Local Anodic Oxidation of Phosporous-Implanted 4H-SiC by Atomic Force Microscopy
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Impact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC Diodes
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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Hexagonal Faceted SiC Nanopillars Fabricated by...

Hexagonal Faceted SiC Nanopillars Fabricated by Inductively Coupled SF₆/O₂ Plasma Method

Abstract:

We demonstrate a top-down fabrication technique for nanometer scale silicon carbide (SiC) pillars by using inductively coupled SF6/O2 plasma etching. The obtained SiC nanopillars exhibit high anisotropy features (aspect ratio ~ 6.5) with high etch depth (>7 μm). The etch characteristics of SiC nanopillars obtained under these conditions show a high etch rate (550 nm/min) and a high selectivity (over 60 for Ni mask). We obtained hexagonal symmetry of SiC nanopillar, which might be attributed to the crystallographic structure of the SiC phase.

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Materials Science Forum (Volumes 717-720)

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893-896

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.893

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Online since:

May 2012

Authors:

J.H. Choi, Laurence Latu-Romain, Thierry Baron, Thierry Chevolleau, Edwige Bano

Keywords:

Dry Plasma Etch, Inductively Coupled Plasma Etching, Silicon Carbide (SiC)

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