Clearance of 4H-SiC Sub-Trench in Hot Chlorine Treatment

Hidenori Koketsu; Tomoaki Hatayama; Hiroshi Yano; Takashi Fuyuki

doi:10.4028/www.scientific.net/MSF.717-720.881

Paper Titles

Cutting of SiC Wafer by Atmospheric-Pressure Plasma Etching with Wire Electrode
p.865

Curious Relationship between Orientation of SiC Substrates and Chemical Reactivity
p.869

High-Resolution TEM Observation of 4H-SiC (0001) Surface Planarized by Catalyst-Referred Etching
p.873

Novel Cleaning Method of SiC Wafer with Transition Metal Complex
p.877

Clearance of 4H-SiC Sub-Trench in Hot Chlorine Treatment
p.881

SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements
p.885

Focused Ion-Beam (FIB) Nanomachining of Silicon Carbide (SiC) Stencil Masks for Nanoscale Patterning
p.889

Hexagonal Faceted SiC Nanopillars Fabricated by Inductively Coupled SF₆/O₂ Plasma Method
p.893

Epitaxial Growth, Mechanical, Electrical Properties of SiC/Si and SiC/Poli-Si
p.897

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Clearance of 4H-SiC Sub-Trench in Hot Chlorine...

Clearance of 4H-SiC Sub-Trench in Hot Chlorine Treatment

Abstract:

The sub-trenches in 4H-SiC Si- and C-faces could be disappeared by the thermal treatment in chlorine ambience at 900-1000oC. The surface morphologies of the thermally treated trench-sidewalls were unchanged. It is considered that the sub-trench is selectively removed because thermally Cl2 etching rate of the (0001) Si- and (000-1) C-face are different to the (11-20) and (1-100).