SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements

Mihai Lazar; François Jomard; Duy Minh Nguyen; Christophe Raynaud; Gontran Pâques; Sigo Scharnholz; Dominique Tournier; Dominique Planson

doi:10.4028/www.scientific.net/MSF.717-720.885

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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720SIMS Analyses Applied to Open an Optical Window in...

SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements

Abstract:

4H-SiC vertical bipolar power diodes have been fabricated with bilayer metallic anode contact based on an Al-Ti-Ni ohmic contact and a thick Al over-metallization. An optical window of 100 × 100 μm2 has been created through the anode contact with a SIMS Cameca IMS 4F equipment using Cs+ primary ions at 10 kV and with a beam spot size of 100 nm. The current/voltage characteristics of the diodes show that the SIMS process does not induce an increase of the leakage currents in forward nor in reverse bias. OBIC UV photogeneration occurs under the optical window and not under the contact metal.

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Materials Science Forum (Volumes 717-720)

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885-888

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.885

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Online since:

May 2012

Authors:

Mihai Lazar, François Jomard, Duy Minh Nguyen, Christophe Raynaud, Gontran Pâques, Sigo Scharnholz, Dominique Tournier, Dominique Planson

Keywords:

4H-SiC, Bipolar Diode, Impact Ionization Coefficients, OBIC, Optical Window, SIMS

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References

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