Curious Relationship between Orientation of SiC Substrates and Chemical Reactivity

Tomoaki Hatayama; Hidenori Koketsu; Hiroshi Yano; Takashi Fuyuki

doi:10.4028/www.scientific.net/MSF.717-720.869

Paper Titles

Common Metal Die Attachment for SiC Power Devices Operated in an Extended Junction Temperature Range
p.853

Metal Work-function and Doping-Concentration Dependent Barrier Height of Ni-Contacts to 4H-SiC with Metal-Embedded Nano-Particles
p.857

Cutting Speed of Electric Discharge Machining for SiC Ingot
p.861

Cutting of SiC Wafer by Atmospheric-Pressure Plasma Etching with Wire Electrode
p.865

Curious Relationship between Orientation of SiC Substrates and Chemical Reactivity
p.869

High-Resolution TEM Observation of 4H-SiC (0001) Surface Planarized by Catalyst-Referred Etching
p.873

Novel Cleaning Method of SiC Wafer with Transition Metal Complex
p.877

Clearance of 4H-SiC Sub-Trench in Hot Chlorine Treatment
p.881

SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements
p.885

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Curious Relationship between Orientation of SiC Substrates and Chemical Reactivity

Abstract:

Relationship between the chemical reactivity and the orientation of SiC substrates was investigated. Thermal etching of 4H-SiC in the mixed gas of oxygen and chlorine was carried out as the chemical reaction. The etching rate did not change monotonously with the increase of the off angle in 4H-SiC (000-1) C substrate. By the use of such tendency in the thermal etching, the three dimensional structure with the specific pyramidal plane was able to be obtained.