Metal Work-function and Doping-Concentration Dependent Barrier Height of Ni-Contacts to 4H-SiC with Metal-Embedded Nano-Particles

Min Seok Kang; Jung Ho Lee; Anders Hallén; Carl Mikael Zetterling; Wook Bahng; Nam Kyun Kim; Sang Mo Koo

doi:10.4028/www.scientific.net/MSF.717-720.857

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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Metal Work-function and Doping-Concentration...

Metal Work-function and Doping-Concentration Dependent Barrier Height of Ni-Contacts to 4H-SiC with Metal-Embedded Nano-Particles

Abstract:

We investigated the effect of the metal work-function and doping concentration on the barrier height of Ni-contacts with embedded nano-particles (NPs) on 4H-SiC surfaces. Both n-type epitaxial layers with ND=1×1016 cm-3, and layers doped by phosphorous implantation to a doping concentration of ~1×1019 cm-3 are used. The barrier height is reduced with increasing doping concentration and the silver (Ag) nano-particles (R~18.5 nm) further enhances the local electric field of the electrical contacts to 4H-SiC in comparison to gold (Au) nano-particles (R~20.2 nm). In the case of ion-implanted samples, the barrier height of the fabricated SiC diode structures with embedded Ag-NPs was significantly reduced by ~0.09 eV and ~0.25 eV compared to the samples with Au-NPs and the sample without NPs, respectively.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

857-860

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.857

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Online since:

May 2012

Authors:

Min Seok Kang, Jung Ho Lee, Anders Hallén, Carl Mikael Zetterling, Wook Bahng, Nam Kyun Kim, Sang Mo Koo

Keywords:

Barrier Height, Metal Contact, Nanoparticle, Tung’s Model

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References

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