Investigation of Ti3SiC2 MAX Phase Formation onto N-Type 4H-SiC

Alexia Drevin-Bazin; Jean François Barbot; Thierry Cabioc’h; Marie France Beaufort

doi:10.4028/www.scientific.net/MSF.717-720.845

Paper Titles

The Thickness-Ratio Effects of Ni/Nb Electrode on Wire Bonding Strength with N-Type 4H-SiC
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The Formation Mechanism of Ni-Based Ohmic Contacts to 4H-n-SiC
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Electroless Nickel for N-Type Contact on 4H-SiC
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Development of an Extreme High Temperature n-Type Ohmic Contact to Silicon Carbide
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Investigation of Ti₃SiC₂ MAX Phase Formation onto N-Type 4H-SiC
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GaZnO as a Transparent Electrode to Silicon Carbide
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Common Metal Die Attachment for SiC Power Devices Operated in an Extended Junction Temperature Range
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Metal Work-function and Doping-Concentration Dependent Barrier Height of Ni-Contacts to 4H-SiC with Metal-Embedded Nano-Particles
p.857

Cutting Speed of Electric Discharge Machining for SiC Ingot
p.861

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Investigation of Ti3SiC2 MAX Phase Formation onto...

Investigation of Ti₃SiC₂ MAX Phase Formation onto N-Type 4H-SiC

Abstract:

In this study, investigations on MAX phase Ti3SiC2 formation to n-type 4H-SiC substrates and its ohmic-behaved are reported. Ti-Al layers were deposited onto SiC substrates at room temperature by magnetron sputtering in high vacuum system. Thermal annealing at 1000°C in Ar atmosphere were performed to allow interdiffusion processes. X-ray diffraction and High Resolution Transmission Electron Microscopy reveal that a Ti3SiC2 contact, in perfect epitaxy with 4H-SiC substrate, is so-obtained. In situ annealing experiment underlines the evolution of Ti-Al contact microstructure versus temperature. The evolution of contact system from Schottky to Ohmic behaved is observed by I-V measurements for annealing temperatures larger than 700°C.

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Silicon Carbide and Related Materials 2011

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

845-848

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.845

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Online since:

May 2012

Authors:

Alexia Drevin-Bazin, Jean François Barbot, Thierry Cabioc’h, Marie France Beaufort

Keywords:

Al-Ti Contact, Magnetron Sputtering, MAX Phase, Silicon Carbide (SiC), Ti₃SiC₂

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