Electroless Nickel for N-Type Contact on 4H-SiC

Abstract:

An electroless nickel film contains 5-14% by weight of phosphorus. Because of the presence of such a high concentration of phosphorus, electroless nickel can be a useful and convenient source of phosphorus dopant in the fabrication of n-type ohmic contacts for SiC. This paper describes the successful deposition of a Ni:P layer on 4H-SiC through electroless nickel plating followed by a discussion of the results of surface science and electrical measurements. Specific contact resistivity on lightly-doped samples with carrier concentration of 2.5 ´ 10¹⁶ cm^-3 has been found to be about 4.8 ´ 10^-6 Ωcm² without any need for ion implantation. This metallization technique is especially useful in broad area ohmic contact formation on the back of n-type SiC substrate.

• Periodical: Materials Science Forum (Volumes 717-720)
• Pages: 837-840
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.717-720.837
• Online since: May 2012
• Authors: Suwan P. Mendis, Chin Che Tin, Michelle T. Tin, Tamara Isaacs-Smith, Erika R. Crandall
• Keywords: Doping, Nickel, n-Type Contact, Phosphorus

References

[1] C.C. Tin, A.V. Adedeji, I.G. Atabayev, B.G. Atabaev, T.M. Saliev, E.N. Bakhranov, M. Li, S.P. Mendis and C. Ahyi, U.S. Patent 7,999,268 (2011).

[2] C.C. Tin, S. Mendis, K. Chew, I. Atabaev, T. Saliev, E. Bakhranov, B. Atabaev, V. Adedeji and Rusli, Oxide film assisted dopant diffusion in silicon carbide, Thin Solid Films 518 (2010) e118.

DOI: 10.1016/j.tsf.2010.03.107

[3] S.P. Mendis and C.C. Tin, Phosphorus oxide assisted n-type dopant diffusion in 4H-silicon carbide, Mater. Res. Soc. Symp. Proc. 1246 (2010) 1246-B07.

DOI: 10.1557/proc-1246-b07-12

[4] G.O. Mallory and J.B. Hajdu (Eds.), Electroless Plating: Fundamentals and Applications, American Electroplaters and Surface Finishers Society, Orlando, 1990.

[5] D. Choudhury, L.G. Bhatgadde and S. Mahapatra, Selective electroless plating - a new technique for GaAs MMIC's, IEEE Transactions on Semiconductor Manufacturing 4 (1991) 69.

DOI: 10.1109/66.75856

[6] G. Stremsdoerfer, E. Queaua and J.R. Martina, Mechanism of the direct electroless Ni-P deposition on n-GaAs by the galvanic initiation process, Electrochimica Acta 39 (1994) 2525.

DOI: 10.1016/0013-4686(94)00252-5

[7] L. Lewis, D.P. Casey, A.V. Jeyaseelan, J.F. Rohan and P.P. Maaskant, Electroless nickel/gold Ohmic contacts to p-type GaN, Appl. Phys. Lett. 92 (2008) 062113.

DOI: 10.1063/1.2842425

[8] C. Boulord, A. Kaminski, B. Canut, S. Cardinal and M. Lemiti, Electrical and structural characterization of electroless nickel–phosphorus contacts for silicon solar cell metallization, Journal of The Electrochemical Society 157 (2010) H742.

DOI: 10.1149/1.3391538

[9] L.M. Porter and R.F. Davis, A critical review of ohmic and rectifying contacts for silicon carbide, Materials Science and Engineering: B 34 (1995) 83.

DOI: 10.1016/0921-5107(95)01276-1

[10] I.P. Nikita, K.V. Vassilevski, N.G. Wright, A.B. Horsfall, A.G. O'Neill and C.M. Johnson, Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide, J. Appl. Phys. 97 (2005) 083709.

DOI: 10.1063/1.1872200

[11] W. Lu, W.C. Mitchel, G.R. Landis, T.R. Crenshaw and W.E. Collins, Ohmic contact properties of Ni/C film on 4H-SiC, Solid-State Electronics 47 (2003) 2001.

DOI: 10.1016/s0038-1101(03)00165-5

[12] M.G. Rastegaeva, A.N. Andreev, A.A. Petrov, A.I. Babanin, M.A. Yagovkina and I.P. Nikita, The influence of temperature treatment on the formation of Ni-based Schottky diodes and ohmic contacts to n-6H-SiC, Mater. Sci. Eng. B46 (1997) 254.

DOI: 10.1016/s0921-5107(96)01989-7