GaZnO as a Transparent Electrode to Silicon Carbide

Jung Ho Lee; Ji Hong Kim; Kang Min Do; Byung Moo Moon; Sung Jae Joo; Wook Bahng; Sang Cheol Kim; Nam Kyun Kim; Sang Mo Koo

doi:10.4028/www.scientific.net/MSF.717-720.849

Paper Titles

The Formation Mechanism of Ni-Based Ohmic Contacts to 4H-n-SiC
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Electroless Nickel for N-Type Contact on 4H-SiC
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Development of an Extreme High Temperature n-Type Ohmic Contact to Silicon Carbide
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Investigation of Ti₃SiC₂ MAX Phase Formation onto N-Type 4H-SiC
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GaZnO as a Transparent Electrode to Silicon Carbide
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Common Metal Die Attachment for SiC Power Devices Operated in an Extended Junction Temperature Range
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Metal Work-function and Doping-Concentration Dependent Barrier Height of Ni-Contacts to 4H-SiC with Metal-Embedded Nano-Particles
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Cutting Speed of Electric Discharge Machining for SiC Ingot
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Cutting of SiC Wafer by Atmospheric-Pressure Plasma Etching with Wire Electrode
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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720GaZnO as a Transparent Electrode to Silicon...

GaZnO as a Transparent Electrode to Silicon Carbide

Abstract:

The characteristics of Ga-doped zinc oxide (GaZnO) thin films deposited at different substrate temperatures (TS~250 to 550oC) on 4H-SiC have been investigated. Structural and electrical properties of GaZnO thin film on n-type 4H-SiC (100)were investigated by using x-ray diffraction, atomic force microscopy (AFM), Hall effect measurement, and Auger electron spectroscopy (AES). Hall mobility is found to increase as the substrate temperature increase from 250 to 550 oC, whereas the lowest resistivity (~3.3 x 10-4 Ωcm) and highest carrier concentration (~1.33x1021cm-3) values are observed for the GaZnO films deposited at 400 oC. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga3+ Introduction ions may affect the electrical properties of GaZnO films on SiC.

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Silicon Carbide and Related Materials 2011

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

849-852

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.849

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Online since:

May 2012

Authors:

Jung Ho Lee, Ji Hong Kim, Kang Min Do, Byung Moo Moon, Sung Jae Joo, Wook Bahng, Sang Cheol Kim, Nam Kyun Kim, Sang Mo Koo

Keywords:

GaZnO, Silicon Carbide (SiC), Transparent Electrode

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