Development of an Extreme High Temperature n-Type Ohmic Contact to Silicon Carbide

Laura J. Evans; Robert S. Okojie; Dorothy Lukco

doi:10.4028/www.scientific.net/MSF.717-720.841

Paper Titles

Effects of Different Post-Implantation Annealing Conditions on the Electrical Properties of Interfaces to p-Type Implanted 4H-SiC
p.825

The Thickness-Ratio Effects of Ni/Nb Electrode on Wire Bonding Strength with N-Type 4H-SiC
p.829

The Formation Mechanism of Ni-Based Ohmic Contacts to 4H-n-SiC
p.833

Electroless Nickel for N-Type Contact on 4H-SiC
p.837

Development of an Extreme High Temperature n-Type Ohmic Contact to Silicon Carbide
p.841

Investigation of Ti₃SiC₂ MAX Phase Formation onto N-Type 4H-SiC
p.845

GaZnO as a Transparent Electrode to Silicon Carbide
p.849

Common Metal Die Attachment for SiC Power Devices Operated in an Extended Junction Temperature Range
p.853

Metal Work-function and Doping-Concentration Dependent Barrier Height of Ni-Contacts to 4H-SiC with Metal-Embedded Nano-Particles
p.857

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Development of an Extreme High Temperature n-Type...

Development of an Extreme High Temperature n-Type Ohmic Contact to Silicon Carbide

Abstract:

We report on the initial demonstration of a tungsten-nickel (75:25 at. %) ohmic contact to silicon carbide (SiC) that performed for up to fifteen hours of heat treatment in argon at 1000 °C. The transfer length method (TLM) test structure was used to evaluate the contacts. Samples showed consistent ohmic behavior with specific contact resistance values averaging 5 x 10-4 Ω-cm². The development of this contact metallization should allow silicon carbide devices to operate more reliably at the present maximum operating temperature of 600 °C while potentially extending operations to 1000 °C.

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Materials Science Forum (Volumes 717-720)

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841-844

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.841

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Online since:

May 2012

Authors:

Laura J. Evans, Robert S. Okojie, Dorothy Lukco

Keywords:

High-Temperature, Nickel, Ohmic Contact, Silicon Carbide (SiC), Tungsten

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