The Formation Mechanism of Ni-Based Ohmic Contacts to 4H-n-SiC

Andrian V. Kuchuk; Krystyna Gołaszewska; Vasyl P. Kladko; M. Guziewicz; Marek Wzorek; Eliana Kamińska; Anna Piotrowska

doi:10.4028/www.scientific.net/MSF.717-720.833

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High Dose Al⁺ Implanted and Microwave Annealed 4H-SiC
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High Temperature Ion Implantation and Activation Annealing Technologies for Mass Production of SiC Power Devices
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Effects of Different Post-Implantation Annealing Conditions on the Electrical Properties of Interfaces to p-Type Implanted 4H-SiC
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The Thickness-Ratio Effects of Ni/Nb Electrode on Wire Bonding Strength with N-Type 4H-SiC
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The Formation Mechanism of Ni-Based Ohmic Contacts to 4H-n-SiC
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Electroless Nickel for N-Type Contact on 4H-SiC
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Development of an Extreme High Temperature n-Type Ohmic Contact to Silicon Carbide
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Investigation of Ti₃SiC₂ MAX Phase Formation onto N-Type 4H-SiC
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GaZnO as a Transparent Electrode to Silicon Carbide
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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720The Formation Mechanism of Ni-Based Ohmic Contacts...

The Formation Mechanism of Ni-Based Ohmic Contacts to 4H-n-SiC

Abstract:

In this work the electrical properties of Ni and Ni₂Si contacts on n-type 4H-SiC were correlated to the strong structural changes at the contact/SiC interface upon annealing. We can conclude that only δ-Ni₂Si grains play a main role in determining electrical transport properties of the Ni-based ohmic contacts to n-SiC. It is presumed that a recrystallization and texturization of δ-Ni₂Si phase on (0001)SiC-surface during high temperature annealing (> 900°C) contributes to the change of barrier heights, as well as specific contact resistance of contacts.

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Materials Science Forum (Volumes 717-720)

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833-836

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.833

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Online since:

May 2012

Authors:

Andrian V. Kuchuk, Krystyna Gołaszewska, Vasyl P. Kladko, M. Guziewicz, Marek Wzorek, Eliana Kamińska, Anna Piotrowska

Keywords:

Contact Resistance, Ni-Silicide, Ohmic Contact, Schottky Barrier, Silicon Carbide (SiC)

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