Cutting Speed of Electric Discharge Machining for SiC Ingot

Hideki Yamada; Satarou Yamaguchi; Norimasa Yamamoto; Tomohisa Kato

doi:10.4028/www.scientific.net/MSF.717-720.861

Paper Titles

Investigation of Ti₃SiC₂ MAX Phase Formation onto N-Type 4H-SiC
p.845

GaZnO as a Transparent Electrode to Silicon Carbide
p.849

Common Metal Die Attachment for SiC Power Devices Operated in an Extended Junction Temperature Range
p.853

Metal Work-function and Doping-Concentration Dependent Barrier Height of Ni-Contacts to 4H-SiC with Metal-Embedded Nano-Particles
p.857

Cutting Speed of Electric Discharge Machining for SiC Ingot
p.861

Cutting of SiC Wafer by Atmospheric-Pressure Plasma Etching with Wire Electrode
p.865

Curious Relationship between Orientation of SiC Substrates and Chemical Reactivity
p.869

High-Resolution TEM Observation of 4H-SiC (0001) Surface Planarized by Catalyst-Referred Etching
p.873

Novel Cleaning Method of SiC Wafer with Transition Metal Complex
p.877

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Cutting Speed of Electric Discharge Machining for...

Cutting Speed of Electric Discharge Machining for SiC Ingot

Abstract:

A new method based on electric discharge machining (EDM) was developed for cutting a silicon carbide (SiC) ingot. The EDM method is a very useful technique to cut hard materials like SiC. By cutting with the EDM method, kerf loss and roughness of sample are generally smaller than those obtained by cutting with a diamond saw. Moreover, the warpage is smaller than that by the diamond saw cutting, and the cutting speed can be 10 times faster than that of the diamond saw at the present time. We used wires of 50 mm and 100 mm diameters in the experiments, and the experimental results of the cutting speed and the kerf losses are presented. The kerf loss of the 50 mm wire is less than 100 mm, and the cutting speed is about 0.8 mm/min for the thickness of a 6 mm SiC ingot. If we can maintain the cutting speed, the slicing time of a 2 inches diameter ingot would be about seven hours.