Performance of a 650V SiC Diode with Reduced Chip Thickness

Roland Rupp; Rolf Gerlach; Uwe Kirchner; Andreas Schlögl; Ronny Kern

doi:10.4028/www.scientific.net/MSF.717-720.921

Paper Titles

ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures
p.901

Local Anodic Oxidation of Phosporous-Implanted 4H-SiC by Atomic Force Microscopy
p.905

Impact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC Diodes
p.911

Experimental Demonstration of 1200V SiC-SBDs with Lower Forward Voltage Drop at High Temperature
p.917

Performance of a 650V SiC Diode with Reduced Chip Thickness
p.921

A Fully Electrically Isolated Package for High Temperature SiC Sensors
p.925

Current Distribution in the Various Functional Areas of a 600V SiC MPS Diode in Forward Operation
p.929

4H-SiC Trench Structure Schottky Diodes
p.933

Influence of Anode Layout on the Performance of SiC JBS Diodes
p.937

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Performance of a 650V SiC Diode with Reduced Chip...

Performance of a 650V SiC Diode with Reduced Chip Thickness

Abstract:

A significant performance gain of 650V SiC diodes is possible by reducing the wafer thickness from the standard thickness of 350 µm to < 150 µm. Not only the differential resistance of the diodes but also the Rth benefit from this chip thickness reduction. As consequence a further chip size reduction with accompanying capacitive charge reduction leads to a device with improved efficiency in PFC applications under both high load and low load conditions.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

921-924

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.921

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Online since:

May 2012

Authors:

Roland Rupp, Rolf Gerlach, Uwe Kirchner, Andreas Schlögl, Ronny Kern

Keywords:

Schottky Diode, Substrate Resistivity, Thin Wafer

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References

[1] R. Rupp, M. Treu, S. Voss, F. Bjoerk, T. Reimann proceedings from ISPSD 2006 on CD (2006)

Google Scholar

[2] R. Rupp et al. Material Science Forum Vols. 645-648 (2010) pp.885-888.

Google Scholar

[3] J. Lutz, T. Poller; Workshop Silicon Carbide Power Electronic Applications (2010) in Stockholm (www.acreo.se/Global/Meet-us-at/2010/100519-JLutz.pdf)

Google Scholar