4H-SiC Trench Structure Schottky Diodes

Masatoshi Aketa; Yuta Yokotsuji; Mineo Miura; Takashi Nakamura

doi:10.4028/www.scientific.net/MSF.717-720.933

Paper Titles

Experimental Demonstration of 1200V SiC-SBDs with Lower Forward Voltage Drop at High Temperature
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Performance of a 650V SiC Diode with Reduced Chip Thickness
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A Fully Electrically Isolated Package for High Temperature SiC Sensors
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Current Distribution in the Various Functional Areas of a 600V SiC MPS Diode in Forward Operation
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4H-SiC Trench Structure Schottky Diodes
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Influence of Anode Layout on the Performance of SiC JBS Diodes
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Performance of Hybrid 4.5 kV SiC JBS Freewheeling Diode and Si IGBT
p.941

Hybrid Si-IGBT/SiC Rectifier Co-Packs and SiC JBS Rectifiers Offering Superior Surge Current Capability and Reduced Power Losses
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12.9 kV SiC PiN Diodes with Low On-State Drops and High Carrier Lifetimes
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HomeMaterials Science ForumMaterials Science Forum Vols. 717-7204H-SiC Trench Structure Schottky Diodes

4H-SiC Trench Structure Schottky Diodes

Abstract:

This paper presents three different structures of Schottky diodes that were fabricated with low Schottky barrier heights. To reduce the forward voltage drop, the introduction of a lower Schttoky barrier is necessary. One of key issues associated with diodes having a low Schottky barrier height and a planar structure is an excessively high leakage current. By introducing the novel trench structure, the leakage current was reduced to a reasonable level. Furthermore it was confirmed that they have minimal switching time during turn-off and high avalanche capability. Thus trench structure Schottky diodes are able to reduce not only switching losses but also conductive losses and demonstrate sufficient robustness.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

933-936

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.933

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Online since:

May 2012

Authors:

Masatoshi Aketa, Yuta Yokotsuji, Mineo Miura, Takashi Nakamura

Keywords:

4H-SiC, Schottky Diode, Trench Structure

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