Influence of Anode Layout on the Performance of SiC JBS Diodes

Abstract:

Various layouts of the anode of Junction Barrier Schottky (JBS) diodes are compared theoretically and it is found that the hexagonal honeycomb structure with 3-D symmetry offers the best figure of merit (FOM). Proportional relationships between the various layouts are reported, using which we extend a fully analytical 2-D model for reverse biased field shielding in a JBS diode to the superior 3-D layouts. The effect of reducing implanted feature size is also analyzed as a trade-off between FOM and breakdown voltage capability.

• Periodical: Materials Science Forum (Volumes 717-720)
• Pages: 937-940
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.717-720.937
• Online since: May 2012
• Authors: Rahul Radhakrishnan, Jian Hui Zhao
• Keywords: Diode, Honeycomb, Junction Barrier Schottky (JBS) Diode, Layout, Model, MPS, Rectifier, Schottky, Silicon Carbide (SiC), Stripes

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