Performance of Hybrid 4.5 kV SiC JBS Freewheeling Diode and Si IGBT

Karl D. Hobart; Eugene A. Imhoff; Fritz J. Kub; A.R. Hefner; T.H. Duong; J.M. Ortiz-Rodriguez; Sei Hyung Ryu; David Grider; Scott Leslie; J. Sherbondy; B. Ray

doi:10.4028/www.scientific.net/MSF.717-720.941

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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Performance of Hybrid 4.5 kV SiC JBS Freewheeling...

Performance of Hybrid 4.5 kV SiC JBS Freewheeling Diode and Si IGBT

Abstract:

The performance of Junction Barrier Schottky (JBS) diodes developed for medium voltage hard-switched Naval power conversion is reported. Nominally 60 A, 4.5kV rated JBS freewheeling diodes were paired with similarly rated Si IGBTs and evaluated for temperature dependent static and dynamic characteristics as well as HTRB and surge capability. The SiC JBS/Si IGBT pair was also directly compared to Si PiN diode/Si IGBT with similar ratings. Compared to Si, the SiC freewheeling diode produced over twenty times lower reverse recovery charge leading to approximately a factor-of-four-reduction in turn-on loss. Alternatively, for equivalent total switching loss, the SiC JBS/Si IGBT hybrid configuration allows for at least a 50% increase in specific switched power density. Reliability testing showed the devices to be robust with zero failures.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

941-944

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.941

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Online since:

May 2012

Authors:

Karl D. Hobart, Eugene A. Imhoff, Fritz J. Kub, A.R. Hefner, T.H. Duong, J.M. Ortiz-Rodriguez, Sei Hyung Ryu, David Grider, Scott Leslie, J. Sherbondy, B. Ray

Keywords:

Freewheeling Diode, Insulated Gate Bipolar Transistor (IGBT), Junction Barrier Schottky (JBS) Diode, Schottky Diode

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References

[1] B. Hull, J. Sumakeris, M. O'Loughlin, Q. Zhang. J. Richmond, A. Powell, E. Imhoff. K. Hobart. A. Rivera-Lopez, A. Hefner, IEEE Trans. on Electron Devices, 55, (2008) 1864.

DOI: 10.1109/ted.2008.926655

Google Scholar

[2] D. Grider, M. Das, A. Agarwal, J. Palmour, S. Leslie, J. Ostop, R. Raju, M. Schutten, A. Hefner, Proc. IEEE Electric Ship Technologies Symposium, (2011) 131.

DOI: 10.1109/ests.2011.5770855

Google Scholar

[3] D. Tournier, P. Waind, P. Godignon, L. Coulbeck, J. Millan and R. Bassett, Mat. Sci. Forum, 527-529 (2006) 1163-1166.

DOI: 10.4028/www.scientific.net/msf.527-529.1163

Google Scholar

[4] T. Duong, A. Hefner, K. Hobart, S. -H. Ryu, D. Grider, D. Berning, J. M. Ortiz-Rodriguez, E. Imhoff, J. Sherbondy, Proc. of IEEE Applied Power Electronics Conference (2011) 1057. Time: 20 ms/div Diode current (50 A/div) Diode voltage (10 V/div).

DOI: 10.1109/apec.2011.5744725

Google Scholar