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HomeMaterials Science ForumMaterials Science Forum Vols. 730-732Vanadium Oxide Thin Films Synthesized by Reactive...

Vanadium Oxide Thin Films Synthesized by Reactive Ion Beam Sputter Deposition: Influence of Processing Parameters

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Abstract:

Vanadium oxide thin films were deposited by reactive ion beam sputtering deposition onto glass substrates. The films were prepared by sputtering from a metallic vanadium target with an argon+oxygen ion beam in vacuum. Different processing conditions were evaluated with focus in obtaining monoclinic VO₂(M) phase, which is known to exhibit a semiconducting-metal phase transition near room temperature. X-ray diffractometry (XRD) analyses revealed amorphous films for temperatures below 500°C. In crystalline films, the co-existence of VO₂(M) with other phases was suppressed by pre-depositing a very thin metallic vanadium seeding layer which showed to promote the formation of single phase VO₂(M) films. The VO₂(M) films showed clearly the distinctive optical modulation behavior at the near-infrared range when going through the phase transition. The temperature dependence of sheet resistance supports the optical analyses revealing an evident semiconducting-metal behavior change up to over 2 orders of magnitude.

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Advanced Materials Forum VI

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Periodical:

Materials Science Forum (Volumes 730-732)

Pages:

251-256

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.730-732.251

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Online since:

November 2012

Authors:

Carlos Batista, Ricardo M. Ribeiro, Vasco Teixeira

Keywords:

Ion Beam Deposition, Metal-Semiconductor Transitions, Thermochromic Films, Vanadium Oxides

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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