[1]
R. Kraus, P. Turkes, J. Sigg, "Physics-Based Models of Power Semiconductor Devices for the Circuit Simulator Spice," in Power Electronics Specialists Conf. PESC'98, vol. 2, pp.1726-1731, May 1998.
DOI: 10.1109/pesc.1998.703414
Google Scholar
[2]
C. L. Ma, P. O. Lauritzen, P.Y. Lin, I. Budihardjo, "A Systematic Approach to Modeling Power Semiconductor Devices Based on Charge Control Principle," in IEEE PESC '94 Record., vol. 1, pp.31-37, Jun. 1994.
DOI: 10.1109/pesc.1994.349753
Google Scholar
[3]
F. Chimento, N. Mora, M. Bellini, I. Stevanovic, S. Tomarchio, "A simplified Spice based IGBT model for power electronics modules evaluation", proceedings of the 37th Annual Conference of the IEEE Industrial Electronics Society IECON 2011, Melbourne, Australia, November 7-10, 2011, pp.1096-1101.
DOI: 10.1109/iecon.2011.6119471
Google Scholar
[4]
C. L. Ma, P. O. Lauritzen, "A Simple Power Diode Model with Forward and Reverse Recovery," in IEEE Trans. Power Electron., vol.8, no. 4, pp.342-346, 1993.
DOI: 10.1109/63.261002
Google Scholar
[5]
C. L. Ma, P. O. Lauritzen, J. Sigg, "Modeling of Power Diodes with the Lumped-Charge Modeling Technique," in IEEE Trans. Power Electron., vol. 12, no. 3, pp.398-405, May 1997.
DOI: 10.1109/63.575666
Google Scholar
[6]
P. O. Lauritzen, C. L. Ma, "A simple diode model with reverse recovery," in IEEE Trans. Pwr. Elec., Vol. 6, No. 2, pp.188-191, April 1991.
Google Scholar
[7]
M. Bellini, I. Stevanović, and D. Prada, "Improved lumped charge model for high voltage power diode and automated extraction procedure," IEEE Bipolar / BiCMOS Circuits and Technology Meeting, Atlanta, USA, October 9-11, 2011, pp.49-52.
DOI: 10.1109/bctm.2011.6082747
Google Scholar
[8]
C. L. Ma, P. O. Lauritzen, J. Sigg, "Modeling of High-Power Thyristors Using the Lumped-Charge Modeling Technique," in 6th European Conf. on Power Electronics and Applications, 1995.
DOI: 10.1109/63.575666
Google Scholar
[9]
C. L. Ma, P. O. Lauritzen, J. Sigg, "A Physics-Based GTO Model for Circuit Simulation," in IEEE Power Electronics Specialists Conf., pp.872-878, 1995.
DOI: 10.1109/pesc.1995.474919
Google Scholar
[10]
Z. Hossain et al. "A Physics-Based MCT Model Using the Lumped-Charge Modeling Technique," in IEEE Power Electronics Specialists Conf, pp.23-28, 1996.
Google Scholar
[11]
I. Budihardjo, P. O. Lauritzen, "The Lumped-Charge Power MOSFET Model, Including Parameter Extraction," in IEEE Trans. Power Electron., vol. 10, no. 3, pp.379-387, 1995.
DOI: 10.1109/63.388005
Google Scholar
[12]
N. Talwalkar, P. O. Lauritzen, B. Fatemizadeh, D. Perlman, C. L. Ma, "A Power BJT Model for Circuit Simulation," in IEEE Power Electronics Specialists Conf, PESC '96 Record., vol. 1, pp.50-55, 1996.
DOI: 10.1109/pesc.1996.548558
Google Scholar
[13]
P. O. Lauritzen, G. K. Andersen, and M. Helsper, "A basic IGBT model with easy parameter extraction," in Proc. IEEE PESC'01 Conf., vol. 4, 2001, p.2160–2165.
DOI: 10.1109/pesc.2001.954440
Google Scholar
[14]
A. Maxim, D. Andreu, J. Boucher, "The Analog Behavioral Spice Macromodeling – A Novel Method of Power Semiconductor Devices Modeling," in IECON'98, vol. 1, pp.375-380, Sept. 19.
DOI: 10.1109/iecon.1998.724153
Google Scholar