On the Assessment of Temperature Dependence of 10 - 20 kV 4H-SiC IGBTs Using TCAD

Abstract:

This paper addresses and evaluates the temperature dependence performance of silicon carbide (4H-SiC) based insulated gate bipolar transistors (IGBTs) using two dimensional numerical computer aided design tool (i.e., Atlas TCAD from Silvaco). Using identical set of device physical parameters (doping, thicknesses), simulated structure was first caliberated with the experimental data. A minority carrier life time in the drift layer of 1.0 – 1.6 µs and contact resistivity of 0.5 - 1.0 x 10-4 Ω-cm2 produces a close match with the experimental device. A set of n type IGBT structures were then numerically simulated to extract the conduction losses for various blocking voltage classes. An on-resistance first decays with temperature (i.e., increased in ionization level, and increase in minority carrier life time), stays nearly constant with further increase in the temperature (may be all carriers are now fully ionized and increase in carrier life time is compensated with decrease in the carrier mobility) and finally increases linearly with temperature (>450 oC) due to decrease in the carrier mobility. Compared with Si based IGBTs, numerical simulation predicts lower VCEON and RON values for 4H-SiC based IGBTs for higher voltage classes and hence potential for achieving smaller conduction losses for SiC based IGBTs.

• Periodical: Materials Science Forum (Volumes 740-742)
• Pages: 1085-1088
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.740-742.1085
• Online since: January 2013
• Authors: Muhammad Nawaz, Filippo Chimento
• Keywords: Design, Insulated Gate Bipolar Transistor (IGBT), Modeling, SiC Device, Simulation of Devices, TCAD

References

[1] J. Wang, T. Zhao, J. Li, A. Q. Huang, R. Callanan, F. Husna, A. Agarwal, Characterization, modeling, and application of 10-kV SiC MOSFET, IEEE Trans. On Electron Devices. 55 (2008), 1798–1805.

DOI: 10.1109/ted.2008.926650

[2] R. S. Howell et al., A 10-kV large-area 4H-SiC power DMOSFET with stable subthreshold behavior independent of temperature, IEEE Trans. On Electron Devices. 55 (2008), 1807-1815.

DOI: 10.1109/ted.2008.928204

[3] Q. Zhang et al., 12 kV 4H-SiC p-IGBTs with record low specific on-resistance, Materials science forum, Vols. 600 – 603 (2009) 1187 – 1190.

DOI: 10.4028/www.scientific.net/msf.600-603.1187

[4] Q. Zhang et al., Design and characterization of high-voltage 4H-SiC p-IGBTs, IEEE Trans. On Electron Devices, 55 (2008) 1912 – (1919).

DOI: 10.1109/ted.2008.926627

[5] M. K. Das et al: State of the art 10 kV NMOS transistors, ISPSD'08, Orlando, (2008) 253-255.

[6] X. Wang and J. A. Cooper, High-voltage n-channel IGBTs on free-standing 4H-SiC epilayers, IEEE Trans. On Electron Devices, 57 (2010) 511 – 515.

DOI: 10.1109/ted.2009.2037379

[7] Silvaco data system Inc, Atlas user manual, Ver 5. 15. 31. C, (2009).