Silicon Carbide Multilevel Converters for Grid-Connected PV Applications

Omid Mostaghimi; Nicholas G. Wright; Alton B. Horsfall

doi:10.4028/www.scientific.net/MSF.740-742.1073

Paper Titles

PWM Power Supply Using SiC RESURF JFETs with High Speed Switching
p.1056

High-Speed Drive Circuit with Separate Source Terminal for 600 V / 40 A Normally-off SiC-JFET
p.1060

High Temperature Digital and Analogue Integrated Circuits in Silicon Carbide
p.1065

Vertical Channel Silicon Carbide JFETs Based Operational Amplifiers
p.1069

Silicon Carbide Multilevel Converters for Grid-Connected PV Applications
p.1073

A Compact Switching Power Supply Utilizing SiC-JFET for an Induction Synchrotron
p.1077

40 kW/L High Switching Frequency Three-Phase AC 400 V All-SiC Inverter
p.1081

On the Assessment of Temperature Dependence of 10 - 20 kV 4H-SiC IGBTs Using TCAD
p.1085

A Simplified Model for SiC Power Diode Modules for Implementation in Spice Based Simulators
p.1089

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Silicon Carbide Multilevel Converters for Grid-Connected PV Applications

Abstract:

To fulfill the space and weight requirements of the photovoltaic systems, an all-SiC transformer less dc-dc multilevel converter based on the Cockcroft-Walton voltage multiplier capable of providing high voltage conversion ratios without an extremely high duty cycle has been realised. The evaluation of converter performance utilising SiC devices have been detailed and presented. The converter offers self-balancing which maintains the same output at all output levels, reducing the complexity of the control strategy. SiC Schottky diodes were used to achive lowest reverse recovery and fast switching while evaluating the high voltage and high frequency performance of the SiC MOSFET in the multilevel boost converter.