High-Speed Drive Circuit with Separate Source Terminal for 600 V / 40 A Normally-off SiC-JFET
p.1060
p.1060
High Temperature Digital and Analogue Integrated Circuits in Silicon Carbide
p.1065
p.1065
Vertical Channel Silicon Carbide JFETs Based Operational Amplifiers
p.1069
p.1069
Silicon Carbide Multilevel Converters for Grid-Connected PV Applications
p.1073
p.1073
A Compact Switching Power Supply Utilizing SiC-JFET for an Induction Synchrotron
p.1077
p.1077
40 kW/L High Switching Frequency Three-Phase AC 400 V All-SiC Inverter
p.1081
p.1081
On the Assessment of Temperature Dependence of 10 - 20 kV 4H-SiC IGBTs Using TCAD
p.1085
p.1085
A Simplified Model for SiC Power Diode Modules for Implementation in Spice Based Simulators
p.1089
p.1089
An Experimental Study on Compact Equivalent Circuit Modeling of SiC Schottky Barrier Didoes
p.1093
p.1093
A Compact Switching Power Supply Utilizing SiC-JFET for an Induction Synchrotron
Abstract:
Utilizing a high power discrete SiC-JFET developed by KEK, a switching power supply (SPS) that had a circuit topology of H-bridge was designed and constructed to drive the induction acceleration system for the KEK digital accelerator. The SPS was operated with a 38 Ω dummy resistance load and bipolar outputs of 800V and 21A were successfully demonstrated at 1 MHz. Also, the combination test with an actual accelerator cell is being conducted.
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Info:
Periodical:
Materials Science Forum (Volumes 740-742)
Pages:
1077-1080
Citation:
Online since:
January 2013
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Сopyright:
© 2013 Trans Tech Publications Ltd. All Rights Reserved
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