Vertical Channel Silicon Carbide JFETs Based Operational Amplifiers

Ayden Maralani; M.S. Mazzola; A.P. Pisano

doi:10.4028/www.scientific.net/MSF.740-742.1069

Paper Titles

Complementary JFET Logic for Low-Power Applications in Extreme Environments
p.1052

PWM Power Supply Using SiC RESURF JFETs with High Speed Switching
p.1056

High-Speed Drive Circuit with Separate Source Terminal for 600 V / 40 A Normally-off SiC-JFET
p.1060

High Temperature Digital and Analogue Integrated Circuits in Silicon Carbide
p.1065

Vertical Channel Silicon Carbide JFETs Based Operational Amplifiers
p.1069

Silicon Carbide Multilevel Converters for Grid-Connected PV Applications
p.1073

A Compact Switching Power Supply Utilizing SiC-JFET for an Induction Synchrotron
p.1077

40 kW/L High Switching Frequency Three-Phase AC 400 V All-SiC Inverter
p.1081

On the Assessment of Temperature Dependence of 10 - 20 kV 4H-SiC IGBTs Using TCAD
p.1085

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Vertical Channel Silicon Carbide JFETs Based Operational Amplifiers

Abstract:

Superior performance of the Silicon Carbide (SiC) semiconductor in high temperature and harsh environment is widely known. However, utilizing the Vertical Channel 4H–SiC JFET (SiC VJFET) for analog circuit design exhibits significant design challenges, even at room temperature. The fundamental challenges are low intrinsic gain, the limitation of the Gate to Source Voltage Range (GSVR), and restrictions on utilizing Channel Length (CL) as a design parameter due to fabrication complexity. These challenges must be successfully overcome at room temperature, before moving forward with high temperature design. After addressing these issues, two operational amplifiers (opamps) with two distinct design topologies are designed and fabricated. The first design (opamp-1) emphasizes on the gain and Common Mode Rejection Ratio (CMRR) performances [1]. The second design (opamp-2) presents a novel opamp [2] with universal applications where the reliability and unity gain frequency performances are also improved. In this paper, the performance parameters of these two opamps along with their design topologies are reported and compared.