Influence of P+-Implantation and Post-Annealing on Warpage Structure of 4H-SiC Wafers

Kotaro Ishiji; Seiji Kawado; Yasuharu Hirai; Shinji Nagamachi

doi:10.4028/www.scientific.net/MSF.778-780.449

Paper Titles

Estimation of Surface Recombination Velocities for n-Type 4H-SiC Surfaces Treated by Various Processes
p.432

Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors
p.436

Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses
p.440

Mechanical Properties and Residual Stress of Thin 3C-SiC(111) Films Determined Using MEMS Structures
p.444

Influence of P⁺-Implantation and Post-Annealing on Warpage Structure of 4H-SiC Wafers
p.449

Residual Stress Measurements of 4H-SiC Crystals Using X-Ray Diffraction
p.453

Evaluation of Mechanical and Optical Properties of Hetero-Epitaxial Single Crystal 3C-SiC Squared-Membrane
p.457

Temperature Dependence of Impact Ionization Coefficients in 4H-SiC
p.461

Improved Analytical Expressions for Avalanche Breakdown in 4H-SiC
p.467

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Influence of P⁺-Implantation and Post-Annealing on Warpage Structure of 4H-SiC Wafers

Abstract:

We examined the warpage structure in epitaxial 4H-SiC wafers subjected to phosphorus-ion (P⁺) implantation and post-annealing with varying implantation and annealing temperatures, using glazing-incidence monochromatic synchrotron X-ray topography. Using Raman spectroscopy, we then studied the relationship between the warpage of the crystal plane in the underlying epilayer and the recovery of lattice disorder in the implanted layer. We determined that the warpage structure of the underlying SiC epilayer was closely correlated with the recovery of lattice disorder in the implanted layer.