Estimation of Surface Recombination Velocities for n-Type 4H-SiC Surfaces Treated by Various Processes

Yuto Mori; Masashi Kato; Masaya Ichimura

doi:10.4028/www.scientific.net/MSF.778-780.432

Paper Titles

C-Face Interface Defects in 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance
p.414

Accurate Characterization of Interface State Density of SiC MOS Structures and the Impacts on Channel Mobility
p.418

Deep-Level Transient Spectroscopy Characterization of Interface States in SiO₂/4H-SiC Structures Close to the Conduction Band Edge
p.424

Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors
p.428

Estimation of Surface Recombination Velocities for n-Type 4H-SiC Surfaces Treated by Various Processes
p.432

Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors
p.436

Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses
p.440

Mechanical Properties and Residual Stress of Thin 3C-SiC(111) Films Determined Using MEMS Structures
p.444

Influence of P⁺-Implantation and Post-Annealing on Warpage Structure of 4H-SiC Wafers
p.449

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Estimation of Surface Recombination Velocities for...

Estimation of Surface Recombination Velocities for n-Type 4H-SiC Surfaces Treated by Various Processes

Abstract:

We evaluated the carrier lifetime to estimate surface recombination velocities for 4H-SiC whose surfaces were treated by various processes. We found that the reactive ion etching (RIE) increased the surface recombination velocity, and we considered that point defects introduced by RIE influence the surface recombination velocity.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2013

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

432-435

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.432

Citation:

Cite this paper

Online since:

February 2014

Authors:

Yuto Mori, Masashi Kato, Masaya Ichimura

Keywords:

4H-SiC, Carrier Lifetime, Surface Recombination Velocity, μ-PCD Method

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] A. Galeckas, J. Linnros, M. Frischholz, and V. Grivckas, Appl. Phys. Lett. Vol. 79, 365-367 (2001).

Google Scholar

[2] P. B. Klein, R. Myers-Ward, K. –K. Lew, B. L. VanMil, C. R. Eddy Jr., D. K. Gaskill, A. Shrivastava, and T. S. Sudarshan, J. Appl. Phys. Vol. 108, 033713-1-11 (2010).

DOI: 10.1063/1.3466745

Google Scholar

[3] K. Kawahara, M. Krieger, J. Suda, and T. Kimoto, J. Appl. Phys. Vol. 108, 023706 (2010).

Google Scholar

[4] S.G. Sridhara, T. J. Eperjesi, R. P. Devaty, and W. J. Choyke, Mater. Sci. Eng., B(1999) 229.

Google Scholar

[5] P. Ščajev, V. Gudelis, K. Jarašiūnas, and P. B. Klein, J. Appl. Phys. Vol. 108, 023705 (2010).

Google Scholar

[6] M. Kato, A. Yoshida, and M. Ichimura, Jpn. J. Appl. Phys. Vol. 51, 02BP12 (2012).

Google Scholar

[7] Y. Ogita, J. Appl. Phys. Vol. 79, 6954 (1996).

Google Scholar

[8] S. Sumie, F. Ojima, K. Yamashita, K. Iba, and H. Hashizume, J. Electrochem. Soc. 152, G99 (2005).

DOI: 10.1149/1.1825911

Google Scholar

[9] T. Kimoto, T. Hiyoshi, T. Hayashi, and J. Suda, J. Appl. Phys. Vol. 108, 083721-1-7 (2010).

Google Scholar