Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors

Lucy Claire Martin; Hua Khee Chan; David T. Clark; Ewan P. Ramsay; A.E. Murphy; Dave A. Smith; Robin. F. Thompson; R.A.R. Young; Jonathan P. Goss; Nicholas G. Wright; Alton B. Horsfall

doi:10.4028/www.scientific.net/MSF.778-780.428

Paper Titles

Nanoscale Characterization of SiC Interfaces and Devices
p.407

C-Face Interface Defects in 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance
p.414

Accurate Characterization of Interface State Density of SiC MOS Structures and the Impacts on Channel Mobility
p.418

Deep-Level Transient Spectroscopy Characterization of Interface States in SiO₂/4H-SiC Structures Close to the Conduction Band Edge
p.424

Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors
p.428

Estimation of Surface Recombination Velocities for n-Type 4H-SiC Surfaces Treated by Various Processes
p.432

Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors
p.436

Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses
p.440

Mechanical Properties and Residual Stress of Thin 3C-SiC(111) Films Determined Using MEMS Structures
p.444

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Low Frequency Noise Analysis of Monolithically...

Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors

Abstract:

Low frequency noise in 4H-SiC lateral p-channel metal oxide semiconductor field effect transistors (PMOSFETs) in the frequency range from 1 Hz to 100 kHz has been used to investigate the relationship between gate dielectric fabrication techniques and the resulting density of interface traps at the semiconductor-dielectric interface in order to examine the impact on device performance. The results show that the low frequency noise characteristics in p-channel 4H-SiC MOSFETs in weak inversion are in agreement with the McWhorter model and are dominated by the interaction of channel carriers with interface traps at the gate dielectric/semiconductor interface.

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Materials Science Forum (Volumes 778-780)

Pages:

428-431

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.428

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Online since:

February 2014

Authors:

Lucy Claire Martin, Hua Khee Chan, David T. Clark, Ewan P. Ramsay, A.E. Murphy, Dave A. Smith, Robin. F. Thompson, R.A.R. Young, Jonathan P. Goss, Nicholas G. Wright, Alton B. Horsfall

Keywords:

1/f Noise, CMOS, Low Frequency Noise, MOSFET

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References

[1] P. L. Dreike, D. M. Fleetwood, D.B. King et al, An overview of high-temperature electronic device technologies and potential applications, IEEE Trans. Comput. Hybrids, Man. Tech. A 17 (1994) 594.

DOI: 10.1109/95.335047

Google Scholar

[2] S. L. Rumyantsev, M. S. Shur, M. E. Levinshtein et al, Low frequency noise in 4H-SiC metal oxide semiconductor field effect transistors, J. Appl. Phys. 104 (2008) 094505.

DOI: 10.1063/1.3009664

Google Scholar

[3] L. M. Terman, An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes, Solid-State Electron, 5 (192) 285-299.

DOI: 10.1016/0038-1101(62)90111-9

Google Scholar

[4] L. C. Martin, D. Clark, E. P. Ramsay et al, Comparison of oxide quality for monolithically fabricated SiC CMOS structures, Ma. Sci. For., 891 (2013) 740-742.

Google Scholar

[5] H. G. Lee, S. Y. Oh, G. Fuller et al, A simple and accurate method to measure the threshold coltage of an enhancement-mode MOSFET, IEEE Trans. Electron Dev. 29 (1982) 346-348.

DOI: 10.1109/t-ed.1982.20707

Google Scholar

[6] F. N. Hooge, 1/f noise sources, IEEE Trans. Electron Dev. 41 (1994) 1926-(1935).

Google Scholar

[7] A. L. McWhorter, Semiconductor Surface Physics, (University of Pennsylvania Press, Philadephia, 1957) p.207.

Google Scholar