C-Face Interface Defects in 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance

Takahide Umeda; Mitsuo Okamoto; Ryo Arai; Yoshihiro Satoh; Ryouji Kosugi; Shinsuke Harada; Hajime Okumura; Takafumi Makino; Takeshi Ohshima

doi:10.4028/www.scientific.net/MSF.778-780.414

Paper Titles

Nanomechanical Analysis of Triangular Defect in 4H-SiC Epilayer
p.394

Analysis on Generation of Localized Step-Bunchings on 4H-SiC(0001)Si Face by Synchrotron X-Ray Topography
p.398

Non Destructive Inspection of Dislocations in SiC Wafer by Mirror Projection Electron Microscopy
p.402

Nanoscale Characterization of SiC Interfaces and Devices
p.407

C-Face Interface Defects in 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance
p.414

Accurate Characterization of Interface State Density of SiC MOS Structures and the Impacts on Channel Mobility
p.418

Deep-Level Transient Spectroscopy Characterization of Interface States in SiO₂/4H-SiC Structures Close to the Conduction Band Edge
p.424

Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors
p.428

Estimation of Surface Recombination Velocities for n-Type 4H-SiC Surfaces Treated by Various Processes
p.432

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780C-Face Interface Defects in 4H-SiC MOSFETs Studied...

C-Face Interface Defects in 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance

Abstract:

This paper reports an EDMR (electrically detected magnetic resonance) observation on 4H-SiC(000-1) “C face” MOSFETs. We found a new strong EDMR signal in wet-oxidized C-face 4H-SiC MOSFETs, which originates from intrinsic interface defects on C-face SiC-SiO2 structures.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

414-417

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.414

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Online since:

February 2014

Authors:

Takahide Umeda*, Mitsuo Okamoto, Ryo Arai, Yoshihiro Satoh, Ryouji Kosugi, Shinsuke Harada, Hajime Okumura, Takafumi Makino, Takeshi Ohshima

Keywords:

4H-SiC MOSFET, C Face Interface, Deep Interface-State Density, EDMR, Interface Defect, Threshold Voltage

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References

[1] M. Okamoto, M. Iijima, K. Fukuda, and H. Okumura, Jpn, J. Appl. Phys. 51 (2012) 046504.

Google Scholar

[2] P. M. Lenahan and J. F. Conley, Jr., J. Vac. Sci. Technol. B 164 (1998) 2134-2153.

Google Scholar

[3] T. Umeda, K. Esaki, R. Kosugi, K. Fukuda, N. Morishita, T. Ohshima, J. Isoya, Appl. Phys. Lett., 99 (2011) 142105.

DOI: 10.1063/1.3644156

Google Scholar

[4] T. Umeda, R. Kosugi, K. Fukuda, N. Morishita, T. Ohshima, K. Esaki and J. Isoya, Mater. Sci. Forum, 717-720 (2012) 427-432.

DOI: 10.4028/www.scientific.net/msf.717-720.427

Google Scholar

[5] T. Umeda, R. Kosugi, Y. Sakuma, M. Okamoto, S. Harada, T. Ohshima, ECS Transactions 50 (2012) 305-311.

DOI: 10.1149/05004.0305ecst

Google Scholar

[6] C. J. Cochrane, P. M. Lenahan, and A. J. Lelis, J. Appl. Phys., 109 (2011) 014506.

Google Scholar

[7] C. J. Cochrane, P. M. Lenahan, and A. J. Lelis, Appl. Phys. Lett., 102 (2013) 193507.

Google Scholar

[8] T. Wimbauer, B. K. Meyer, A. Hofstaetter, A. Scharmann, and H. Overhof, Phys. Rev. B 56 (1997) 7384-7388.

Google Scholar