Analysis on Generation of Localized Step-Bunchings on 4H-SiC(0001)Si Face by Synchrotron X-Ray Topography

Masayuki Sasaki; Kentaro Tamura; Hideki Sako; Makoto Kitabatake; Kazutoshi Kojima; Hirohumi Matsuhata

doi:10.4028/www.scientific.net/MSF.778-780.398

Paper Titles

Defects Grouping and Characterizations of PL-Imaging Methods for 4H-SiC Epitaxial Layers
p.382

Characterization of Vacant Broken Line Defects in A-Face Grown Crystals of Silicon Carbide
p.386

Formation of Double Stacking Faults from Polishing Scratches on 4H-SiC (0001) Substrate
p.390

Nanomechanical Analysis of Triangular Defect in 4H-SiC Epilayer
p.394

Analysis on Generation of Localized Step-Bunchings on 4H-SiC(0001)Si Face by Synchrotron X-Ray Topography
p.398

Non Destructive Inspection of Dislocations in SiC Wafer by Mirror Projection Electron Microscopy
p.402

Nanoscale Characterization of SiC Interfaces and Devices
p.407

C-Face Interface Defects in 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance
p.414

Accurate Characterization of Interface State Density of SiC MOS Structures and the Impacts on Channel Mobility
p.418

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Analysis on Generation of Localized Step-Bunchings...

Analysis on Generation of Localized Step-Bunchings on 4H-SiC(0001)Si Face by Synchrotron X-Ray Topography

Abstract:

Surface roughening regions running like scratches are often observed locally after epitaxy film grown on a very flat 4H-SiC wafer surfaces. We investigated generation mechanism of such roughening surface by using X-ray topography and confocal optical microscopy. We found that lattice defects were often introduced during CMP at local regions, and those local regions cannot be recognized by optical microscopy, since very flat surface can be observed. By H₂ etching which is preprocess of epitaxy film growth, those lattice defects are almost etched off, but local rough surface consists of pits and step bunching regions appear like scratches, and those local pits and surface roughening regions grew up to step bunching during epitaxy film growth.

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Silicon Carbide and Related Materials 2013

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

398-401

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.398

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Online since:

February 2014

Authors:

Masayuki Sasaki, Kentaro Tamura, Hideki Sako, Makoto Kitabatake, Kazutoshi Kojima, Hirohumi Matsuhata

Keywords:

Basal Plane Dislocation (BPD), Chemo-Mechanical Polishing (CMP), H₂ Etching, Lattice Defect, Silicon Carbide (SiC), Step-Bunching, X-Ray Topography

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References

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