Characterization of Vacant Broken Line Defects in A-Face Grown Crystals of Silicon Carbide

Naohiro Sugiyama; Masanori Yamada; Yasushi Urakami; Masakazu Kobayashi; Takashi Masuda; Keisuke Shigetoh; Itaru Gunjishima; Fusao Hirose; Shoichi Onda

doi:10.4028/www.scientific.net/MSF.778-780.386

Paper Titles

Microstructural Analysis of Damaged Layer Introduced during Chemo-Mechanical Polishing
p.370

Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography
p.374

Micro-Raman Characterization of 4H-SiC Stacking Faults
p.378

Defects Grouping and Characterizations of PL-Imaging Methods for 4H-SiC Epitaxial Layers
p.382

Characterization of Vacant Broken Line Defects in A-Face Grown Crystals of Silicon Carbide
p.386

Formation of Double Stacking Faults from Polishing Scratches on 4H-SiC (0001) Substrate
p.390

Nanomechanical Analysis of Triangular Defect in 4H-SiC Epilayer
p.394

Analysis on Generation of Localized Step-Bunchings on 4H-SiC(0001)Si Face by Synchrotron X-Ray Topography
p.398

Non Destructive Inspection of Dislocations in SiC Wafer by Mirror Projection Electron Microscopy
p.402

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Characterization of Vacant Broken Line Defects in...

Characterization of Vacant Broken Line Defects in A-Face Grown Crystals of Silicon Carbide

Abstract:

A new type of defects, vacant broken line defects, was found to occur in a-face grown crystals of 4H-Silicon Carbide. We characterized the vacant broken line defects by high voltage transmission electron microscope (HV-TEM). The HV-TEM image revealed that the edges of broken line defects were connected by a bundle of dislocations, which elongated to the growth direction on the basal plane. The analysis by gb method for determining Burgers vector indicated that the dislocations were not pure screw dislocations, but complex of screw and edge dislocations. The vacant broken line defect was considered to be a quasi-stable state of a bundle of basal plane dislocations in a-face growth, similar to a micropipe defect in c-face growth.

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Silicon Carbide and Related Materials 2013

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

386-389

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.386

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Online since:

February 2014

Authors:

Naohiro Sugiyama*, Masanori Yamada, Yasushi Urakami, Masakazu Kobayashi, Takashi Masuda, Keisuke Shigetoh, Itaru Gunjishima, Fusao Hirose, Shoichi Onda

Keywords:

A-Face Growth, Basal Plane Dislocation (BPD), Burgers Vector, Crystal Defect, Micropipe, Silicon Carbide (SiC), Transmission Electron Microscopy (TEM), Vacant Broken Line Defect

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